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| CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. CHM8030LANPT CURRENT 75 Ampere FEATURE * Small flat package. (D2PAK) * High density cell design for extremely low RDS(ON). * Rugged and reliable. 0.420(10.67) 0.380(9.69) 0.245(6.22) MIN. K D2PAK 0.190(4.83) 0.160(4.06) 0.055(1.40) 0.045(1.14) 0.055(1.40) 0.047(1.19) 1 3 2 0.575(14.60) 0.360(9.14) * N-Channel Enhancement 0.625(15.88) CONSTRUCTION 0.320(8.13) 0.110(2.79) 0.090(2.29) 0.100(2.54) 0.095(2.41) 0.037(0.940) 0.027(0.686) 0.025(0.64) 0.018(0.46) 0.110(2.79) 0.080(2.03) CIRCUIT (1) G D (3) 1 Gate 2 Source 3 Drain ( Heat Sink ) S (2) Dimensions in inches and (millimeters) D2PAK Absolute Maximum Ratings Symbol Parameter TA = 25C unless otherwise noted CHM8030LANPT Units VDSS VGSS Drain-Source Voltage Gate-Source Voltage Maximum Drain Current - Continuous 30 V V 20 75 ID - Pulsed PD TJ TSTG Maximum Power Dissipation Operating Temperature Range Storage Temperature Range (Note 3) A 225 75 -55 to 150 -55 to 150 W C C Note : 1. Surface Mounted on FR4 Board , t <=10sec 2. Pulse Test , Pulse width <= 300us , Duty Cycle <= 2% 3. Repetitive Rating , Pulse width linited by maximum junction temperature 4. Guaranteed by design , not subject to production trsting Thermal characteristics RJA Thermal Resistance, Junction-to-Ambient (Note 1) 62.5 C/W 2006-01 RATING CHARACTERISTIC CURVES ( CHM8030LANPT ) Electrical Characteristics T Symbol Parameter A = 25C unless otherwise noted Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS IDSS I GSSF I GSSR Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Body Leakage VGS = 0 V, ID = 250 A VDS = 30 V, VGS = 0 V VGS = 20V,VDS = 0 V VGS = -20V, VDS = 0 V 30 1 +100 -100 V A nA nA ON CHARACTERISTICS (Note 2) VGS(th) RDS(ON) g FS Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance VDS = VGS, ID = 250 A VGS=10V, ID=37.5A VDS =10V, ID = 26A 1 5.5 40 3 6.5 V m S SWITCHING CHARACTERISTICS (Note 4) Qg Qgs Q tr toff tf gd Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Time Rise Time Turn-Off Time Fall Time VDS=15V, ID=40A VGS=5V V DD= 15V ID = 60A , VGS = 10 V RGEN= 6 35 11 16 25 21 58 13 45 nC ton 50 45 100 33 nS DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS VSD Drain-Source Diode Forward Current (Note 1) 75 1.3 A V Drain-Source Diode Forward Voltage IS = 37.5A , VGS = 0 V (Note 2) |
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