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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor DESCRIPTION *Collector Current -IC= 10A *Collector-Emitter Sustaining Voltage: VCEO(SUS) = 45V(Min)- BDV91; 60V(Min)- BDV93 80V(Min)- BDV95 *Complement to Type BDV92/94/96 APPLICATIONS *Designed for use in audio output stages and general amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER BDV91 VCER Collector-Emitter Voltage BDV93 BDV95 BDV91 VCEO Collector-Emitter Voltage BDV93 BDV95 VEBO IC ICM IB B BDV91/93/95 VALUE 60 80 100 60 80 100 7 10 20 7 14 100 150 -65~150 UNIT V V Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current Emitter Current Collector Power Dissipation @ TC=25 Junction Temperature Storage Temperature Range V A A A A W IE PC TJ Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance, Junction to Case MAX 1.25 UNIT /W isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER BDV91 VCEO(SUS) Collector-Emitter Sustaining Voltage BDV93 BDV95 VCE(sat)-1 VCE(sat)-2 VBE(sat) VBE(on) ICEO ICBO IEBO hFE-1 hFE-2 fT Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base -Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Current-Gain--Bandwidth Product IC= 4A; IB= 0.4A B BDV91/93/95 CONDITIONS MIN 60 TYP. MAX UNIT IC= 100mA ;IB=0 80 100 1.0 3.0 1.6 1.6 0.2 0.1 1.0 0.1 20 5 3.0 V V V V V mA mA mA IC= 10A; IB= 3.3A IC= 4A; IB= 0.4A B IC= 4A ; VCE= 4V VCE= VCEOmax;IB= 0 VCB= VCBOmax;IE= 0 1 VCB= /2VCBOmax;IE= 0; TJ= 150 VEB= 7V; IC=0 IC= 4A ; VCE= 4V IC= 10A ; VCE= 4V IC= 0.5A ;VCE= 10V MHz Switching times ton toff tf Turn-on Time Turn-off Time Fall Time IC= 4A; IB1= -IB2= 0.4A; VCC= 30V 0.5 2.0 0.7 s s s isc Websitewww.iscsemi.cn 2 |
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