![]() |
|
If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
Datasheet File OCR Text: |
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1683 DESCRIPTION *With TO-220C package *Complement to type 2SA843 *High breakdown voltage *Large collector power dissipation APPLICATIONS *Audio frequency power amplifier *Color TV vertical deflection output PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION * Absolute maximum ratings(Ta=25) SYMBOL VCBO VCEO VEBO IC ICM PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Total power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 200 150 5 500 2 20 150 -50~150 UNIT V V V mA A W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SC1683 MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=5mA ; IB=0 150 V V(BR)CBO Collector-base breakdown voltage IC=0.5mA ; IE=0 200 V V(BR)EBO Emitter-base breakdown voltage IE=0.5mA ; IC=0 5 V VCEsat Collector-emitter saturation voltage IC=500mA; IB=50mA 1.0 V VBE Base-emitter on voltage IC=400m A ; VCE=10V 1.0 V A ICBO Collector cut-off current VCB=200V ;IE=0 50 IEBO Emitter cut-off current VEB=4V; IC=0 50 A hFE DC current gain IC=400m A ; VCE=10V 60 200 hFE Classifications P 60-140 Q 85-200 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC1683 Fig.2 Outline dimensions (unindicated tolerance:0.10 mm) 3 |
Price & Availability of 2SC1683
![]() |
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |