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| SMD Type Silicon NPN Epitaxial Planar Type 2SD2457 Transistors Features High collector-emitter voltage (Base open) VCEO. Low collector power dissipation PC. Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating 50 40 5 3 1.5 1 150 -55 to +150 Unit V V V A A W Electrical Characteristics Ta = 25 Parameter Collector-base cutoff current Collector-emitter cutoff current Emitter-base cutoff current Collector-base voltage Collector-emitter voltage Forward current transfer ratio Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance Symbol ICBO ICEO IEBO VCBO VCEO hFE Testconditons VCB = 20 V, IE = 0 VCE = 10 V, IB = 0 VEB = 5 V, IC = 0 IC = 1 mA, IE = 0 IC = 2 mA, IB = 0 VCE = 5 V, IC = 1 A 50 40 80 120 220 1 1.5 150 45 V V MHz pF Min Typ Max 1 100 10 Unit iA iA iA V V VCE(sat) IC = 1.5 A, IB = 0.15 A VBE(sat) IC = 2 A, IB = 0.2 A fT Cob VCB = 5 V, IE = -0.5 A, f = 200 MHz VCB = 20 V, IE = 0, f = 1 MHz hFE Classification Marking Rank hFE Q 80 160 1Y R 120 220 www.kexin.com.cn 1 |
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