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INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors 2SB653 DESCRIPTION *Collector-Emitter Breakdown Voltage: V(BR)CEO= -100V(Min) *High Power Dissipation: PC= 60W(Max)@TC=25 *Complement to Type 2SD673 APPLICATIONS *Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VCBO VCEO VEBO IC ICM IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Collector Power Dissipation @TC=25 Junction Temperature Storage Temperature w ww scs .i VALUE -120 -100 -5 -7 -12 -2 60 150 -55~150 UNIT V V .cn mi e V A A A PC TJ Tstg W isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors ELECTRICAL CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL V(BR)CEO V(BR)EBO VCE(sat) VBE(on) ICBO hFE-1 hFE-2 fT tf PARAMETER Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current DC Current Gain DC Current Gain Current-Gain--Bandwidth Product Fall Time CONDITIONS IC= -50mA; RBE= IE= -5mA; IC= 0 IC= -5A; IB= -0.5A B 2SB653 MIN -100 -5 TYP. MAX UNIT V V -3.0 -1.5 -1 60 200 V V mA IC= -1A; VCE= -5V VCB= -100V; IE= 0 hFE Classifications B 60-120 C w w w. .cn mi cse is IC= -1A; VCE= -5V IC= -5A; VCE= -5V 20 IC= -1A; VCE= -5V IC= -0.6A; IB1= -0.6A; IB2= 0 22 0.5 MHz s 100-200 isc Websitewww.iscsemi.cn |
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