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 INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Power Transistors
2SB653
DESCRIPTION *Collector-Emitter Breakdown Voltage: V(BR)CEO= -100V(Min) *High Power Dissipation: PC= 60W(Max)@TC=25 *Complement to Type 2SD673
APPLICATIONS *Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL VCBO VCEO VEBO IC ICM IB
B
PARAMETER Collector-Base Voltage
Collector-Emitter Voltage Emitter-Base Voltage
Collector Current-Continuous Collector Current-Peak Base Current-Continuous Collector Power Dissipation @TC=25 Junction Temperature Storage Temperature
w
ww
scs .i
VALUE -120 -100 -5 -7 -12 -2 60 150 -55~150
UNIT V
V
.cn mi e
V A A A
PC TJ Tstg
W
isc Websitewww.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Power Transistors
ELECTRICAL CHARACTERISTICS
Tj=25 unless otherwise specified SYMBOL V(BR)CEO V(BR)EBO VCE(sat) VBE(on) ICBO hFE-1 hFE-2 fT tf PARAMETER Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current DC Current Gain DC Current Gain Current-Gain--Bandwidth Product Fall Time CONDITIONS IC= -50mA; RBE= IE= -5mA; IC= 0 IC= -5A; IB= -0.5A
B
2SB653
MIN -100 -5
TYP.
MAX
UNIT V V
-3.0 -1.5 -1 60 200
V V mA
IC= -1A; VCE= -5V VCB= -100V; IE= 0
hFE Classifications B 60-120 C
w w
w.
.cn mi cse is
IC= -1A; VCE= -5V IC= -5A; VCE= -5V 20 IC= -1A; VCE= -5V IC= -0.6A; IB1= -0.6A; IB2= 0
22 0.5
MHz s
100-200
isc Websitewww.iscsemi.cn


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