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| INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor 2SB1340 DESCRIPTION *Collector-Emitter Breakdown Voltage: V(BR)CEO= -120V(Min) *High DC Current Gain: hFE= 2000(Min)@ (VCE= -3V, IC= -2A) *Complement to Type 2SD1889 APPLICATIONS *Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -6 A ICM Collector Current-Peak Collector Power Dissipation @Ta=25 -10 A 2 W PC Collector Power Dissipation @TC=25 TJ Junction Temperature 30 150 Tstg Storage Temperature -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor ELECTRICAL CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO VCE(sat) ICBO IEBO hFE COB fT PARAMETER Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Collector-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain Output Capacitance Current-Gain--Bandwidth Product CONDITIONS IC= -5mA ; IB= 0 IC= -50A ; IE= 0 IC= -3A; IB= -6mA B 2SB1340 MIN -120 -120 TYP. MAX UNIT V V -1.5 -100 -3 2000 70 12 20000 V A VCB= -120V ; IE= 0 VEB= -5V; IC= 0 IC= -2A ; VCE= -3V IE= 0; VCB= -10V; ftest= 1MHz IE= 0.5A ; VCE= -5V; ftest= 10MHz mA pF MHz isc Websitewww.iscsemi.cn 2 |
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