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| SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB1052 DESCRIPTION *With TO-220Fa package *Complement to type 2SD1480 *Low collector saturation voltage APPLICATIONS *For power amplifier applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector Base Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector -emitter voltage Emitter-base voltage Collector current Collector current-peak Ta=25 PC Collector power dissipation TC=25 Tj Tstg Junction temperature Storage temperature 25 150 -55~150 CONDITIONS Open emitter Open base Open collector VALUE -60 -60 -6 -2 -4 2.0 W UNIT V V V A A SavantIC Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=-30mA; IB=0 IC=-2A ;IB=-0.2A IC=-1A ; VCE=-4V VCE=-60V; VBE=0 VCE=-30V; IB=0 VEB=-6V; IC=0 IC=-0.1A ; VCE=-4V IC=-1A ; VCE=-4V 35 40 MIN -60 2SB1052 SYMBOL V(BR)CEO VCEsat VBE ICES ICEO IEBO hFE-1 hFE-2 TYP. MAX UNIT V -2.0 -1.2 -0.2 -0.3 -1.0 V V mA mA mA 250 Switching times ton tstg tf Turn-on time Storage time Fall time IC=-1A ;IB1=-IB2=-0.1A 0.1 1.5 0.3 s s s hFE-2 Classifications R 40-90 Q 70-150 P 120-250 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB1052 Fig.2 Outline dimensions (unindicated tolerance: 0.15 mm) 3 |
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