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| SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SA1109 DESCRIPTION *With TO-3 package *Low collector saturation voltage *High transition frequency APPLICATIONS *For audio frequency amplifier and high power amplifier applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE -180 -180 -5 -10 -14 200 150 -65~150 UNIT V V V A A W SavantIC Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=-25mA ;IB=0 IC=-5A ;IB=-0.5A IC=-5A;VCE=-5V VCB=-180V; IE=0 VEB=-5V; IC=0 IC=-2A ; VCE=-5V IC=-5A ; VCE=-5V IC=-0.5A ; VCE=-5V 50 30 MIN -180 2SA1109 SYMBOL V(BR)CEO VCEsat VBE ICBO IEBO hFE-1 hFE-2 fT TYP. MAX UNIT V -2.0 -1.5 -0.1 -0.1 160 V V mA mA 60 MHz 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA1109 Fig.2 outline dimensions (unindicated tolerance:0.1mm) 3 |
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