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| SavantIC Semiconductor Product Specification Silicon PNP Power Transistors TIP30/30A/30B/30C DESCRIPTION *With TO-220C package *Complement to type TIP29/29A/29B/29C APPLICATIONS *For use in general purpose power amplifer and switching applications PINNING PIN 1 2 3 Emitter Collector;connected to mounting base Base DESCRIPTION ABSOLUTE MAXIMUM RATINGS(Tc=25 ) SYMBOL PARAMETER TIP30 TIP30A VCBO Collector-base voltage TIP30B TIP30C TIP30 TIP30A VCEO Collector-emitter voltage TIP30B TIP30C VEBO IC ICM IB PC Tj Tstg Emitter-base voltage Collector current (DC) Collector current-Pulse Base current Collector power dissipation Junction temperature Storage temperature TC=25 Open collector Open base -80 -100 -5 -1 -3 -0.4 30 150 -65~150 V A A A w Open emitter -80 -100 -40 -60 V CONDITIONS VALUE -40 -60 V UNIT SavantIC Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER TIP30 Collector-emitter sustaining voltage TIP30A IC=-30mA; IB=0 TIP30B TIP30C VCE(sat) VBE Collector-emitter saturation voltage Base-emitter on voltage TIP30 Collector cut-off current TIP30A TIP30B TIP30C Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency TIP30/30A TIP30B/30C IC=-1A ;IB=-0.125A IC=-1A ; VCE=-4V VCE=-40V; VEB=0 VCE=-60V; VEB=0 CONDITIONS SYMBOL TIP30/30A/30B/30C MIN -40 -60 TYP. MAX UNIT VCEO(SUS) V -80 -100 -0.7 -1.3 V V ICES -0.2 VCE=-80V; VEB=0 VCE=-100V; VEB=0 VCE=-30V; IB=0 -0.3 VCE=-60V; IB=0 VEB=-5V; IC=0 IC=-0.2A ; VCE=-4V IC=-1A ; VCE=-4V IC=-0.2A ; VCE=-10V;f=1MHz 40 15 3 75 -1.0 mA ICEO mA IEBO hFE-1 hFE-2 fT mA MHz THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 4.167 UNIT /W 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE TIP30/30A/30B/30C Fig.2 Outline dimensions (unindicated tolerance:0.10 mm) 3 |
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