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Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD633 2SD635
DESCRIPTION *With TO-220C package *Complement to type 2SB673/675 *DARLINGTON *High DC current gain *Low saturation voltage APPLICATIONS *High power switching *Hammer drive,pulse motor drive
PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION
*
Absolute maximum ratings(Ta=25)
SYMBOL PARAMETER 2SD633 VCBO Collector-base voltage 2SD635 2SD633 VCEO Collector-emitter voltage 2SD635 VEBO IC IB
B
CONDITIONS
VALUE 100
UNIT
Open emitter 60 100 Open base 60 Open collector 5 7 0.7 TC=25 40 150 -50~150
V
V
Emitter-base voltage Collector current Base current Collector dissipation Junction temperature Storage temperature
V A A W
PC Tj Tstg
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified SYMBOL PARAMETER 2SD633 V(BR)CEO Collector-emitter breakdown voltage 2SD635 VCEsat-1 VCEsat-2 VBEsat Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage 2SD633 ICBO Collector cut-off current 2SD635 IEBO hFE-1 hFE-2 Emitter cut-off current DC current gain DC current gain IC=3A; IB=6mA IC=7A; IB=14mA IC=3A; IB=6mA VCB=100V; IE=0 IC=50mA; IB=0 CONDITIONS
2SD633 2SD635
MIN 100
TYP.
MAX
UNIT
V 60 1.5 2.0 2.5 V V V
100 VCB=60V; IE=0 VEB=5V; IC=0 IC=3A ; VCE=3V IC=7A ; VCE=3V 2000 1000 3.0 15000
A
mA
Switching times ton ts tf Turn-on time Storage time Fall time IB1=-IB2=6mA VCC=45V;RL=15 0.8 3.0 2.5 s s s
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SD633 2SD635
Fig.2 Outline dimensions (unindicated tolerance:0.10mm)
3

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