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| SMD Type Silicon NPN Epitaxial 2SC3120 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors IC Unit: mm +0.1 2.4-0.1 Features +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature Range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 30 15 3 50 25 150 125 -55 to +125 Unit V V V mA mA mW Electrical Characteristics Ta = 25 Parameter Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Reverse Transfer Capacitance Transition Frequency Conversion Gain Noise Figure Symbol ICBO IEBO Testconditons VCB = 30V, IE = 0 VEB = 2V, IC = 0 15 40 100 0.6 1500 12 2400 17 8 200 0.9 pF MHz dB dB Min Typ Max 0.1 1.0 Unit iA iA V V(BR)CEO IC=1mA,IB=0 hFE Cre fT Gce NF VCE = 10 V, IC = 5 mA VCB=10V, IE=0, f=1MHz VCE = 10 V, IC = 2mA VCE = 10 V, IC = 2mA,f=800MHz FL=830MHz Marking Marking HB +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1 |
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