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| INCHANGE Semiconductor isc Product Specification 2SC2260 isc Silicon NPN Power Transistor DESCRIPTION *High Power Dissipation: PC= 80W(Max.)@TC=25 *Collector-Emitter Breakdown Voltage: V(BR)CEO= 100V(Min.) *Complement to Type 2SA980 APPLICATIONS *Designed for general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage w w scs .i w VALUE 160 100 6 8 3 80 UNIT .cn mi e V V V A A IC Collector Current-Continuous IB B Base Current-Continuous Collector Power Dissipation @TC=25 Junction Temperature PC W Tj 150 Tstg Storage Temperature -65~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification 2SC2260 isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; IB= 0 100 V VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.3A B 1.5 V ICBO Collector Cutoff Current VCB= 160V; IE= 0 1.0 mA IEBO Emitter Cutoff Current VEB= 6V; IC= 0 1.0 mA hFE DC Current Gain IC= 3A; VCE= 4V 30 fT Current-Gain--Bandwidth Product IE= -0.5A; VCE= 12V w w scs .i w .cn mi e 15 MHz isc Websitewww.iscsemi.cn |
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