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SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC1905 DESCRIPTION *With TO-220C package *High breakdown voltage *Large collector power dissipation APPLICATIONS *Color TV horizontal deflection driver PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE 350 300 7.5 200 400 15 150 -55~150 UNIT V V V mA mA W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Output capacitance Storage time CONDITIONS IC=5mA ; IB=0 IC=100A ; IE=0 IE=100A ; IC=0 IC=50mA; IB=5mA VCB=200V ;IE=0 VEB=5V; IC=0 IC=10m A ; VCE=10V IC=10m A ; VCE=30V IE=0 ; VCB=50V; f=1MHz IC=100mA; IB1=10mA; IB2=0 5 40 50 MIN 300 350 7.5 2SC1905 SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat ICBO IEBO hFE fT COB tstg TYP. MAX UNIT V V V 1.0 2 2 250 V A A MHz 4.5 7.5 pF s 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC1905 Fig.2 Outline dimensions (unindicated tolerance:0.10 mm) 3 |
Price & Availability of 2SC1905 |
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