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| Transys Electronics LIMITED SOT-89 Plastic-Encapsulate Transistors 2SA1203 FEATURES Power dissipation 2. COLLECTOR PCM : 0.5 W (Tamb=25) 3. EMITTER 1 2 3 TRANSISTOR (PNP) SOT-89 1. BASE Collector current : -1.5 A ICM Collector-base voltage V V(BR)CBO : -30 Operating and storage junction temperature range TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) VCE(sat) VBE unless otherwise specified) Test conditions MIN TYP MAX UNIT V V V Ic=-1mA, IE=0 Ic=-10mA, IB=0 IE=-1mA, IC=0 VCB=-30V, IE=0 VEB=-5V, IC=0 VCE=-2V, IC=-500mA IC=-1.5A, IB=-30mA VCE=-2V, IC=-500mA VCE=-2V, IC=-500mA VCB=-10V, IE=0, f=1MHz -30 -30 -5 -0.1 -0.1 100 320 -2 -1 120 50 A A V V MHz pF fT Cob CLASSIFICATION OF hFE(1) Rank Range Marking O 100-200 HO1 Y 160-320 HY1 Typical Characteristics 2SA1203 |
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