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Ordering number : ENA0636 SBR50-16JS SANYO Semiconductors DATA SHEET SBR50-16JS Applications * Schottky Barrier Diode (Twin Type * Cathode Common) 160V, 5A Rectifier High frequency rectification (switching regulators, converters, choppers). Features * * * * * * Tj=150C. Low forward voltage (VF max=0.80V). Short reverse recovery time. Low switching noise. High reliability due to planar structure. Attachment workability is good by Mica-less package. Specifications Absolute Maximum Ratings at Ta=25C Parameter Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage Average Output Current Surge Forward Current Junction Temperature Storage Temperature Symbol VRRM VRSM IO IFSM Tj Tstg 50Hz resistive load, Sine wave Tc=128C 50Hz sine wave, 1 cycle Conditions Ratings 160 165 5 80 --55 to +150 --55 to +150 Unit V V A A C C Electrical Characteristics at Ta=25C Parameter Reverse Voltage Forward Voltage Reverse Current Symbol VR VF IR Conditions IR=1mA, Tj=25C* IF=2.5A, Tj=25C* VR=160V, Tj=25C* Ratings min 160 0.77 2.5 0.80 50 typ max Unit V V A Note) * : Value per element Continued on next page. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN N2807SD TI IM TC-00001000 No. A0636-1/3 SBR50-16JS Continued from preceding page. Parameter Interterminal Capacitance Thermal Resistance Symbol C Rth(j-c) Conditions VR=10V, Tj=25C* Junction-Case : Smoothed DC Ratings min typ 48 5.0 max Unit pF C / W Note) * : Value per element Package Dimensions unit : mm (typ) 7525-001 10.0 3.5 4.5 2.8 Electrical Connection Anode Anode 3.2 7.2 Cathode 16.0 3.6 1.6 1.2 14.0 0.75 123 0.7 1 : Anode 2 : Cathode 3 : Anode SANYO : TO-220ML(LS) 2.55 2.55 2.4 10 7 5 3 IF -- VF 10 7 5 IR -- VR Tj=15 p 0C ty Reverse Current, IR -- mA Forward Current, IF -- A 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0.01 p 2 C ty 150 1.0 7 5 3 2 25 C typ typ 125C Tj= 100C typ typ 75C 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 IT11966 0 20 40 60 80 100 120 140 160 180 Forward Voltage, VF -- V Average Forward Power Dissipation, PF(AV) -- W 6 Average Reverse Power Dissipation, PR(AV) -- W PF(AV) -- IO Reverse Voltage, VR -- V 1.2 IT11967 PR(AV) -- VRM Sine wave 5 (3) 180 360 1.0 4 Rectangular wave 360 (2) (1) (4) (1)Rectangular wave =300 (2)Rectangular wave =240 (3)Rectangular wave =180 (4)Sine wave =180 Rectangular wave VR 360 (1) (2) (3) 0.8 3 0.6 2 0.4 Sine wave VR 180 1 0 0 1 2 (1)Rectangular wave =60 (2)Rectangular wave =120 (3)Rectangular wave =180 (4)Sine wave =180 3 4 5 6 7 IT11968 (4) 0.2 360 0 0 20 40 60 80 100 120 140 160 180 Average Output Current, IO -- A Peak Reverse Voltage, VRM -- V IT11969 No. A0636-2/3 SBR50-16JS 160 Tc -- IO Interterminal Capacitance, C -- pF 5 3 2 C -- VR f=100kHz 150 Case Temperature, Tc -- C (1)Rectangular wave =60 (2)Rectangular wave =120 (3)Rectangular wave =180 (4)Sine wave =180 140 130 Rectangular wave 360 100 7 5 3 2 120 110 Sine wave 360 2 3 (1) (2) (4) (3) 100 90 0 180 1 4 5 6 7 IT11970 10 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 Average Output Current, IO -- A 120 Transient Thermal Resistance, Rth(j-c) -- C / W IFSM -- t IS Reverse Voltage, VR -- V 10 7 5 5 7 100 IT11971 Rth(j-c) -- t Surge Forward Current, IFSM(Peak) -- A Current waveform 50Hz sine wave 100 80 20ms t 3 2 60 40 1.0 7 5 20 0 7 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 3 0.001 2 3 5 70.01 23 5 7 0.1 23 5 7 1.0 23 Time, t -- s ID01009 Time, t -- s 5 7 10 ID01010 SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of November, 2007. Specifications and information herein are subject to change without notice. PS No. A0636-3/3 |
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