 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor MJE2901T DESCRIPTION *Collector-Emitter Breakdown Voltage: V(BR)CEO = -60V(Min) *High DC Current Gain: hFE= 25-100@IC= -3A *Complement to Type MJE2801T APPLICATIONS *Designed for use as an output device in complementary audio amplifiers up to 35 watts music power per channel. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VCBO VCEO VEBO IC IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Base Current-Continuous Collector Power Dissipation @ TC=25 Junction Temperature Storage Temperature Range VALUE -60 -60 -4 -10 -5 75 150 -55~150 UNIT V V V A A W PC TJ Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 1.67 UNIT /W isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MJE2901T TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -200mA; IB= 0 -60 V VCE(sat) Collector-Emitter Saturation Voltage IC= -4A; IB= -0.4A B -1.1 V VBE(on) Base-Emitter On Voltage IC= -3A ; VCE= -2V VCB= -60V; IE= 0 VCB= -60V; IE= 0;TC= 150 VEB= -4V; IC=0 -1.4 -0.1 -2.0 -1.0 V ICBO Collector Cutoff Current mA IEBO Emitter Cutoff Current mA hFE DC Current Gain IC= -3A ; VCE= -2V 25 100 isc Websitewww.iscsemi.cn 2 |
Price & Availability of MJE2901T
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |