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SMD Type
P-Channel Enhancement Mode Vertical D-MOS Transistor KSP230
SOT-223
Transistors
Unit: mm
+0.2 3.50-0.2
Features
Direct interface to C-MOS,TTL,etc High-speed switching
6.50
+0.2 -0.2
0.1max +0.05 0.90-0.05
+0.1 3.00-0.1
+0.2 0.90-0.2 +0.3 7.00-0.3
No secondary breakdown
4
1
2 2.9 4.6
3
+0.1 0.70-0.1
1 gate 2,4 drain 3 source
Absolute Maximum Ratings Ta = 25
Parameter Drain-source voltage (DC) Gate-source voltage (DC) open drain Drain current (DC) Peak drain current Total power dissipation * Storage temperature Operating junction temperature thermal resistance from junction to ambient * Symbol VDS VGSO ID IDM Ptot Tstg Tj Rth j-a Rating -300 20 -210 -0.75 1.5 -65 to +150 150 83.3 K/W Unit V V mA A W
*Device mounted on an epoxy printed-circuit board, 40 X 40 X 1.5 mm; mounting pad for drain lead minimum 6 cm2.
+0.15 1.65-0.15
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1
SMD Type
KSP230
Electrical Characteristics Ta = 25
Parameter Drain-source breakdown voltage Gate-source threshold voltage Drain-source leakage current Gate leakage current Drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time (See Fig.1and Fig.2) Turn-off time (See Fig.1and Fig.2) Symbol Testconditons
Transistors
Min -300 -1.7
Typ
Max
Unit V
V(BR)DSS ID= -10 iA, VGS = 0V VGSth IDSS IGSS RDS(on) yfs Ciss Coss Crss ton toff VGS = 0 V to -10 V,ID = -250 mA, VDD = -50 V, VGS = -10V to 0 V,ID = -250 mA, VDD = -50 V, VDS = -25 V, VGS = 0 V, f = 1 MHz VDS = VGS, ID= -1 mA VDS = -240 V, VGS = 0V VGS = 20V,VDS=0
-2.55 -100 100 17
V A nA
ID = -170 mA, VGS = -10 V VDS = -25 V , ID = -170 mA 100 60 15 5 5 15
mS 90 30 15 10 ns 30 pF
Fig.1Switching time test circuit.
Fig.2 Input and output waveforms.
2
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