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INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors 2SC3519/A DESCRIPTION *Collector-Emitter Breakdown VoltageV(BR)CEO= 160V(Min)-2SC3519 = 180V(Min)-2SC3519A *Good Linearity of hFE *Complement to Type 2SA1386/A APPLICATIONS *Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNIT 2SC3519 VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage ww w 2SC3519A 2SC3519 2SC3519A scs .i 160 V 180 160 V 180 5 V 15 A 4 A .cn mi e VEBO Emitter-Base Voltage IC Collector Current-Continuous IB B Base Current-Continuous Collector Power Dissipation @ TC=25 Junction Temperature PC 130 W TJ 150 Tstg Storage Temperature Range -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER 2SC3519 V(BR)CEO Collector-Emitter Breakdown Voltage 2SC3519A Collector-Emitter Saturation Voltage 2SC3519 ICBO Collector Cutoff Current 2SC3519A IEBO hFE COB fT Emitter Cutoff Current DC Current Gain Output Capacitance VCB= 180V; IE= 0 VEB= 5V; IC= 0 IC= 5.0A; IB= 0.5A VCB= 160V; IE= 0 IC= 25mA ; IB= 0 180 CONDITIONS MIN 160 2SC3519/A TYP. MAX UNIT V VCE(sat) 2.0 100 V A 100 100 180 250 50 pF MHz A IC= 5A ; VCE= 4V Current-Gain--Bandwidth Product Switching Times ton tstg tf Turn-on Time Storage Time Fall Time w w Y 90-180 w. IE= 0; VCB= 10V;ftest= 1.0MHz IE= -2A ; VCE= 12V .cn mi cse is 50 0.2 IC= 10A ,RL= 4, IB1= -IB2= 1A,VCC= 40V 1.3 0.45 s s s hFE Classifications O 50-100 P 70-140 isc Websitewww.iscsemi.cn 2 |
Price & Availability of 2SC3519
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