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Datasheet File OCR Text: |
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2078 DESCRIPTION *Collector-Emitter Voltage:VCER= 75V(Min) ;RBE=150 *Collector Current:IC=3A APPLICATIONS *27MHz RF Power Amplifier Applications ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VCBO VCER VEBO IC ICM PARAMETER Collector-Base Voltage VALUE 80 UNIT V Collector-Emitter Voltage RBE=150 Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak w w scs .i w 75 5 3 5 1.2 10 150 -55~150 .cn mi e V V A A W Collector Power Dissipation @ Ta=25 PC Collector Power Dissipation @ TC=50 TJ Tstg Junction Temperature Storage Temperature Range isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC2078 TYP. MAX UNIT V(BR)CBO Collector-Base Breakdown Voltage IC=0.1mA; IB= 0 80 V V(BR)CER Collector-Emitter Breakdown Voltage IC=0.1mA; RBE=150 75 V V(BR)EBO Emitter-Base Breakdown Voltage IE=0.1mA; IC= 0 5 V VCE(sat) Collector-Emitter Saturation Voltage IC=1A; IB= 0.1A 0.6 V VBE(sat) Base-Emitter Saturation Voltage IC=1A; IB= 0.1A 1.2 V ICBO Collector Cutoff Current VCB= 40V ; IE= 0 IEBO Emitter Cutoff Current hFE DC Current Gain COB Output Capacitance fT Current-Gain--Bandwidth Product w w D 60-120 scs .i w VEB= 4V; IC= 0 IC= 500mA ; VCE= 5V .cn mi e 25 45 100 4.0 60 10 A 10 A 200 IE= 0; VCB= 10V; ftest= 1MHz 60 pF IC= 500mA; VCE= 10V MHz PO Output Power VCC= 12V;Pin=0.2W, f=27MHz W Power Efficiency % hFE Classifications B 25-50 C 40-80 E 100-200 isc Websitewww.iscsemi.cn 2 |
Price & Availability of 2SC2078
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