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| MITSUBISHI SEMICONDUCTOR M63803P/FP/GP/KP 7-UNIT 300mA TRANSISTOR ARRAY DESCRIPTION M63803P, M63803FP, M63803GP and M63803KP are seven-circuit Singe transistor arrays. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low inputcurrent supply. PIN CONFIGURATION IN1 1 IN2 2 IN3 3 INPUT IN4 4 IN5 5 IN6 6 IN7 7 16 O1 15 O2 14 O3 13 O4 12 O5 11 O6 10 O7 9 OUTPUT FEATURES q Four package configurations (P, FP, GP and KP) q Medium breakdown voltage (BVCEO 35V) q Synchronizing current (IC(max) = 300mA) q Low output saturation voltage q Wide operating temperature range (Ta = -40 to +85C) GND 8 NC 16P4(P) 16P2N-A(FP) 16P2S-A(GP) Package type 16P2Z-A(KP) NC : No connection CIRCUIT DIAGRAM OUTPUT APPLICATION Driving of digit drives of indication elements (LEDs and lamps) with small signals INPUT 10.5k 10k GND FUNCTION The M63803P, M63803FP, M63803GP and M63803KP each have seven circuits consisting of NPN transistor. The transistor emitters are all connected to the GND pin (pin 8) The transistors allow synchronous flow of 300mA collector current. A maximum of 35V voltage can be applied between the collector and emitter. The seven circuits share the GND. The diode, indicated with the dotted line, is parasitic, and cannot be used. Unit : ABSOLUTE MAXIMUM RATINGS Symbol VCEO IC VI Parameter Collector-emitter voltage Collector current Input voltage (Unless otherwise noted, Ta = -40 ~ +85C) Conditions Output, H Current per circuit output, L M63803P M63803FP M63803GP M63803KP Ratings -0.5 ~ +35 300 -0.5 ~ +35 1.47 1.00 0.80 0.78 -40 ~ +85 -55 ~ +125 Unit V mA V Pd Power dissipation Ta = 25C, when mounted on board W Topr Tstg Operating temperature Storage temperature C C Jan. 2000 MITSUBISHI SEMICONDUCTOR M63803P/FP/GP/KP 7-UNIT 300mA TRANSISTOR ARRAY RECOMMENDED OPERATING CONDITIONS (Unless otherwise noted, Ta = -40 ~ +85C) Symbol VO Parameter Output voltage M63803P Collector current (Current per 1 cirIC cuit when 7 circuits are coming on simultaneously) M63803GP M63803KP VIN Input voltage M63803FP Duty Cycle no more than 45% Duty Cycle no more than 100% Duty Cycle no more than 30% Duty Cycle no more than 100% Duty Cycle no more than 24% Duty Cycle no more than 100% Duty Cycle no more than 24% Duty Cycle no more than 100% Test conditions Limits min 0 0 0 0 0 0 0 0 0 0 typ -- -- -- -- -- -- -- -- -- -- max 35 250 160 250 130 250 120 250 120 20 Unit V mA V ELECTRICAL CHARACTERISTICS (Unless otherwise noted, Ta = 25C) Symbol V (BR) CEO VCE(sat) VIN(on) hFE Parameter Collector-emitter breakdown voltage Test conditions Limits min 35 -- -- 2.4 50 typ -- -- -- 3.5 -- max -- 0.2 0.8 4.2 -- Unit V V V -- ICEO = 10A IIN = 1mA, IC = 10mA Collector-emitter saturation voltage IIN = 2mA, IC = 150mA "On" input voltage IIN = 1mA, IC = 10mA DC amplification factor VCE = 10V, IC = 10mA SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25C) Symbol ton toff Parameter Turn-on time Turn-off time CL = 15pF (note 1) Test conditions Limits min -- -- typ 125 250 max -- -- Unit ns ns NOTE 1 TEST CIRCUIT TIMING DIAGRAM INPUT Vo 50% INPUT Measured device PG 50 RL OUTPUT 50% CL OUTPUT 50% 50% ton toff (1)Pulse generator (PG) characteristics : PRR=1kHz, tw = 10s, tr = 6ns, tf = 6ns, Zo = 50, VIH = 3V (2)Input-output conditions : RL = 220, Vo = 35V (3)Electrostatic capacity CL includes floating capacitance at connections and input capacitance at probes Jan. 2000 MITSUBISHI SEMICONDUCTOR M63803P/FP/GP/KP 7-UNIT 300mA TRANSISTOR ARRAY TYPICAL CHARACTERISTICS Thermal Derating Factor Characteristics 2.0 8 Ta = -40C Input Characteristics Power dissipation Pd (W) 1.0 M63803FP M63803GP M63803KP 0.744 0.520 0.418 0.406 Input current II (mA) 1.5 M63803P 6 4 Ta = 25C Ta = 85C 0.5 2 0 0 0 25 50 75 85 100 0 5 10 15 20 Ambient temperature Ta (C) Duty Cycle-Collector Characteristics (M63803P) 400 400 Input voltage VI (V) Duty Cycle-Collector Characteristics (M63803P) Collector current Ic (mA) 300 1~4 5 6 7 Collector current Ic (mA) 300 1~2 3 4 200 *The collector current values represent the current per circuit. *Repeated frequency 10Hz *The value the circle represents the value of the simultaneously-operated circuit. *Ta = 25C 200 5 6 7 *The collector current values represent the current per circuit. *Repeated frequency 10Hz *The value the circle represents the value of the simultaneously-operated circuit. *Ta = 85C 100 100 0 0 20 40 60 80 100 0 0 20 40 60 80 100 Duty cycle (%) Duty Cycle-Collector Characteristics (M63803FP) 400 400 Duty cycle (%) Duty Cycle-Collector Characteristics (M63803FP) Collector current Ic (mA) 300 1~3 4 5 6 7 *The collector current values represent the current per circuit. *Repeated frequency 10Hz *The value the circle represents the value of the simultaneously-operated circuit. *Ta = 25C Collector current Ic (mA) 300 1 2 200 200 100 100 *The collector current values represent the current per circuit. *Repeated frequency 10Hz *The value the circle represents the value of the simultaneously-operated circuit. *Ta = 85C 3 4 5 6 7 0 0 20 40 60 80 100 0 0 20 40 60 80 100 Duty cycle (%) Duty cycle (%) Jan. 2000 MITSUBISHI SEMICONDUCTOR M63803P/FP/GP/KP 7-UNIT 300mA TRANSISTOR ARRAY 400 Duty Cycle-Collector Characteristics (M63803GP/KP) 400 Duty Cycle-Collector Characteristics (M63803GP/KP) Collector current Ic (mA) Collector current Ic (mA) 300 1~2 3 4 5 6 7 *The collector current values represent the current per circuit. *Repeated frequency 10Hz *The value the circle represents the value of the simultaneously-operated circuit. *Ta = 25C 300 1 2 200 200 100 100 0 0 20 40 60 80 100 0 *The collector current values represent the current per circuit. *Repeated frequency 10Hz *The value the circle represents the value of the simultaneously-operated circuit. *Ta = 85C 3 4 56 7 0 20 40 60 80 100 Duty cycle (%) Output Saturation Voltage Collector Current Characteristics 250 Ta = 25C IB = 2mA Duty cycle (%) Output Saturation Voltage Collector Current Characteristics 100 Ta = 25C VI = 7V VI = 6V Collector current Ic (mA) 150 IB = 1mA Collector current Ic (mA) 200 IB = 3mA IB = 1.5mA 80 VI = 5V 60 40 VI = 4V VI = 3V VI = 2V 100 IB = 0.5mA 50 20 0 0 0.2 0.4 0.6 0.8 0 0 0.05 0.10 0.15 0.20 Output saturation voltage VCE(sat) (V) Output Saturation Voltage Collector Current Characteristics 100 II = 2mA Output saturation voltage VCE(sat) (V) DC Amplification Factor Collector Current Characteristics 103 DC amplification factor hFE Collector current Ic (mA) 80 7 VCE = 10V Ta = 25C 5 3 2 Ta = -40C Ta = 25C Ta = 85C 60 102 7 5 3 2 40 20 0 0 0.05 0.10 0.15 0.20 101 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 Collector current Ic (mA) Output saturation voltage VCE(sat) (V) Jan. 2000 |
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