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 PD -95677
IRG4BC20KD-SPBF
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT
RECOVERY DIODE Features
Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10s @ 125C, VGE = 15V Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than previous generation IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations Industry standard D2Pak package Lead-Free
C
Short Circuit Rated UltraFast IGBT
VCES = 600V
G E
VCE(on) typ. = 2.27V
@VGE = 15V, IC = 9.0A
n-channel
density motor controls possible. HEXFREDTM diodes optimized for performance with IGBTs. Minimized recovery characteristics reduce noise, EMI and switching losses. This part replaces the IRGBC20KD2-S and IRGBC20MD2-S products. For hints see design tip 97003.
Benefits Latest generation 4 IGBT's offer highest power
D 2 Pak
Max.
600 16 9.0 32 32 7.0 32 10 20 60 24 -55 to +150 300 (0.063 in. (1.6mm) from case) 10 lbfin (1.1 Nm)
Absolute Maximum Ratings
VCES IC @ TC = 25C IC @ TC = 100C ICM ILM IF @ TC = 100C IFM tsc VGE PD @ TC = 25C PD @ TC = 100C TJ TSTG
Parameter
Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Diode Continuous Forward Current Diode Maximum Forward Current Short Circuit Withstand Time Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw.
Units
V
A
s V W C
Thermal Resistance
RJC RJC RCS RJA Wt
Parameter
Junction-to-Case - IGBT Junction-to-Case - Diode Case-to-Sink, Flat, Greased Surface Junction-to-Ambient ( PCB Mounted,steady-state) Weight
Typ.
0.5 1.44
Max.
2.1 2.5 40
Units
C/W g
8/11/04
IRG4BC20KD-SPBF
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
V(BR)CES
V(BR)CES/TJ
VCE(on)
VGE(th) VGE(th)/TJ gfe ICES VFM IGES
Parameter Min. Typ. Max. Units Collector-to-Emitter Breakdown Voltage 600 V Temperature Coeff. of Breakdown Voltage 0.49 V/C Collector-to-Emitter Saturation Voltage 2.27 2.8 3.01 V 2.43 Gate Threshold Voltage 3.0 6.0 Temperature Coeff. of Threshold Voltage -10 mV/C Forward Transconductance 2.9 4.3 S Zero Gate Voltage Collector Current 250 A 1000 Diode Forward Voltage Drop 1.4 1.7 V 1.3 1.6 Gate-to-Emitter Leakage Current 100 nA
Conditions VGE = 0V, IC = 250A VGE = 0V, IC = 1.0mA IC = 9.0A VGE = 15V See Fig. 2, 5 IC = 16A IC = 9.0A, TJ = 150C VCE = VGE, IC = 250A VCE = VGE, IC = 250A VCE = 100V, IC = 9.0A VGE = 0V, VCE = 600V VGE = 0V, VCE = 600V, TJ = 150C IC = 8.0A See Fig. 13 IC = 8.0A, TJ = 150C VGE = 20V
Switching Characteristics @ TJ = 25C (unless otherwise specified)
Qg Qge Qgc t d(on) tr td(off) tf Eon Eoff Ets tsc t d(on) tr td(off) tf Ets LE Cies Coes Cres trr Irr Qrr di(rec)M/dt Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Short Circuit Withstand Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Reverse Recovery Time Diode Peak Reverse Recovery Current Diode Reverse Recovery Charge Diode Peak Rate of Fall of Recovery During tb Min. 10 Typ. Max. Units Conditions 34 51 IC = 9.0A 4.9 7.4 nC VCC = 400V See Fig.8 14 21 VGE = 15V 54 34 TJ = 25C ns 180 270 IC = 9.0A, VCC = 480V 72 110 VGE = 15V, RG = 50 0.34 Energy losses include "tail" 0.30 mJ and diode reverse recovery 0.64 0.96 See Fig. 9,10,14 s VCC = 360V, TJ = 125C VGE = 15V, RG = 50 , VCPK < 500V 51 TJ = 150C, See Fig. 11,14 37 IC = 9.0A, VCC = 480V ns 220 VGE = 15V, RG = 50 160 Energy losses include "tail" 0.85 mJ and diode reverse recovery 7.5 nH Measured 5mm from package 450 VGE = 0V 61 pF VCC = 30V See Fig. 7 14 = 1.0MHz 37 55 ns TJ = 25C See Fig. 55 90 TJ = 125C 14 IF = 8.0A 3.5 5.0 A TJ = 25C See Fig. 4.5 8.0 TJ = 125C 15 VR = 200V 65 138 nC TJ = 25C See Fig. 124 360 TJ = 125C 16 di/dt = 200As 240 A/s TJ = 25C See Fig. 210 TJ = 125C 17
IRG4BC20KD-SPBF
2.5
For both:
2.0
LOAD CURRENT (A)
Duty cycle: 50% TJ = 125C 55C Tsink = 90C Gate drive as specified
Power Dissipation = 1.8 W Square wave: 60% of rated voltage
1.5
1.0
I
0.5
Ideal diodes
0.0 0.1
1
10
100
f, Frequency (KHz)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
100
100
I C , Collector-to-Emitter Current (A)
TJ = 25 o C TJ = 150 o C
10
I C, Collector-to-Emitter Current (A)
10
TJ = 150 o C
TJ = 25 oC V CC = 50V 5s PULSE WIDTH
5 10 15 20
1
V GE = 15V 20s PULSE WIDTH
1 10
1
VCE , Collector-to-Emitter Voltage (V)
VGE , Gate-to-Emitter Voltage (V)
Fig. 2 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
IRG4BC20KD-SPBF
20
5.0
VCE , Collector-to-Emitter Voltage(V)
VGE = 15V 80 us PULSE WIDTH IC = 18 A
Maximum DC Collector Current(A)
15
4.0
10
3.0
IC = 9.0A 9A
2.0
5
IC = 4.5 A
0
25
50
75
100
125
150
TC , Case Temperature ( C)
1.0 -60 -40 -20
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( C)
Fig. 4 - Maximum Collector Current vs. Case Temperature
Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature
10
Thermal Response (Z thJC )
1
D = 0.50 0.20 0.10 0.05 P DM t1 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = PDM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 t2
0.1
0.02 0.01
0.01 0.00001
t1 , Rectangular Pulse Duration (sec)
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
IRG4BC20KD-SPBF
800
VGE , Gate-to-Emitter Voltage (V)
100
VGE = 0V, f = 1MHz Cies = Cge + Cgc , Cce SHORTED Cres = Cgc Coes = Cce + Cgc
20
VCC = 400V I C = 9.0A
C, Capacitance (pF)
600
16
Cies
400
12
8
200
Coes Cres
4
0
1
10
0
VCE , Collector-to-Emitter Voltage (V)
0
10
20
30
40
QG , Total Gate Charge (nC)
Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage
0.8
Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage
10
Total Switching Losses (mJ)
Total Switching Losses (mJ)
V CC = 480V V GE = 15V TJ = 25 C I C = 9.0A
RG 50 = Ohm VGE = 15V VCC = 480V IC = 18 A
0.7
1
IC = 9.0A 9A IC = 4.5 A
0.6
0.5
0
10
20
30
40
50
0.1 -60 -40 -20
0
20
40
60
80 100 120 140 160
RG ,, Gate Resistance ( (Ohm) RG Gate Resistance )
TJ , Junction Temperature ( C )
Fig. 9 - Typical Switching Losses vs. Gate Resistance
Fig. 10 - Typical Switching Losses vs. Junction Temperature
IRG4BC20KD-SPBF
3.0
2.0
I C , Collector-to-Emitter Current (A)
Total Switching Losses (mJ)
RG TJ VCC VGE
= 50 Ohm = 150 C = 480V = 15V
100
VGE = 20V T J = 125 o C
10
1.0
0.0
0
4
8
12
16
20
1
SAFE OPERATING AREA
1 10 100 1000
I C, Collector-to-emitter Current (A)
VCE, Collector-to-Emitter Voltage (V)
Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current
100
Fig. 12 - Turn-Off SOA
Instantaneous Forward Current - I F (A)
10
TJ = 150C TJ = 125C TJ = 25C
1
0.1 0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current
Forward Voltage Drop - V FM (V)
IRG4BC20KD-SPBF
100
100
VR = 200V TJ = 125C TJ = 25C
80
VR = 200V TJ = 125C TJ = 25C
IF = 16A I F = 8.0A
I IRRM - (A)
t rr - (ns)
60
10
I F = 16A IF = 8.0A I F = 4.0A
40
I F = 4.0A
20
0 100
di f /dt - (A/s)
1000
1 100
di f /dt - (A/s)
1000
Fig. 14 - Typical Reverse Recovery vs. dif/dt
500
Fig. 15 - Typical Recovery Current vs. dif/dt
10000
VR = 200V TJ = 125C TJ = 25C
400
VR = 200V TJ = 125C TJ = 25C
300
di(rec)M/dt - (A/s)
Q RR - (nC)
I F = 16A
200
1000
IF = 4.0A IF = 8.0A I F = 16A
I F = 8.0A
100
IF = 4.0A
0 100
100 100
di f /dt - (A/s)
1000
di f /dt - (A/s)
1000
Fig. 16 - Typical Stored Charge vs. dif/dt
Fig. 17 - Typical di(rec)M/dt vs. dif/dt
IRG4BC20KD-SPBF
Same type device as D.U.T.
90% Vge +Vge
Vce
80% of Vce
430F D.U.T.
Ic 10% Vce 90% Ic Ic 5% Ic td(off) tf
Fig. 18a - Test Circuit for Measurement of ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf
Eoff =
t1+5S Vce Ic Vceic dtdt
t1
t1
t2
Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining
Eoff, td(off), tf
GATE VOLTAGE D.U.T. 10% +Vg +Vg
Ic
trr
Qrr =
trr id dt Ic dt tx
tx 10% Vcc Vce Vcc 10% Ic 90% Ic DUT VOLTAGE AND CURRENT Ipk
10% Irr Vcc
Vpk
Irr
Ic DIODE RECOVERY WAVEFORMS
td(on)
tr
5% Vce t2 Vce Ic Eon = Vce ie dtdt t1 t2 DIODE REVERSE RECOVERY ENERGY t3
t4 Erec = Vd idIc dt Vd dt t3
t1
t4
Fig. 18c - Test Waveforms for Circuit of Fig. 18a,
Defining Eon, td(on), tr
Fig. 18d - Test Waveforms for Circuit of Fig. 18a,
Defining Erec, trr, Qrr, Irr
IRG4BC20KD-SPBF
D2Pak Package Outline
Dimensions are shown in millimeters (inches)
D2Pak Part Marking Information (Lead-Free)
T H IS IS AN IR F 5 3 0 S W IT H L OT CODE 80 2 4 AS S E M B L E D ON W W 0 2, 20 00 IN T H E AS S E M B L Y L IN E "L " N ote: "P " in as s em bly lin e po s itio n in dicates "L ead-F r ee" IN T E R N AT IO N AL R E C T IF IE R L OGO AS S E M B L Y L O T CO D E P AR T N U M B E R F 5 30 S D AT E C O D E Y E AR 0 = 2 0 0 0 W E E K 02 L IN E L
OR
IN T E R N AT IO N AL R E C T IF IE R L O GO AS S E M B L Y L OT COD E P AR T N U M B E R F 530S D AT E CO D E P = D E S IG N AT E S L E AD -F R E E P R O D U C T (O P T IO N AL ) Y E AR 0 = 2 0 0 0 W E E K 02 A = AS S E M B L Y S IT E CO D E
IRG4BC20KD-SPBF
Notes:
Repetitive rating: VGE=20V; pulse width limited by maximum junction temperature (figure 20) VCC=80%(VCES), VGE=20V, L=10H, RG= 50 (figure 19) Pulse width 80s; duty factor 0.1%. Pulse width 5.0s, single shot. When mounted on 1" square PCB (FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
D2Pak Tape & Reel Infomation
TRR
1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153)
1.60 (.063) 1.50 (.059)
0.368 (.0145) 0.342 (.0135)
FEED DIRECTION 1.85 (.073)
1.65 (.065)
11.60 (.457) 11.40 (.449)
15.42 (.609) 15.22 (.601)
24.30 (.957) 23.90 (.941)
TRL
10.90 (.429) 10.70 (.421) 1.75 (.069) 1.25 (.049) 16.10 (.634) 15.90 (.626) 4.72 (.136) 4.52 (.178)
FEED DIRECTION
13.50 (.532) 12.80 (.504)
27.40 (1.079) 23.90 (.941)
4
330.00 (14.173) MAX.
60.00 (2.362) MIN.
NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
26.40 (1.039) 24.40 (.961) 3
30.40 (1.197) MAX. 4
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.08/04
Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/


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