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| BCR16PM-12LD Triac Medium Power Use REJ03G1562-0100 Rev.1.00 Jul 06, 2007 Features * * * * IT (RMS) : 16 A VDRM : 600 V IFGTI, IRGTI, IRGTIII : 50 mA Viso : 2000 V * The product guaranteed maximum junction temperature 150C. * Insulated Type * Planar Type Outline RENESAS Package code: PRSS0003AA-A (Package name: TO-220F ) 2 1. T1 Terminal 2. T2 Terminal 3. Gate Terminal 3 1 1 23 Applications Motor control, heater control Maximum Ratings Parameter Repetitive peak off-state voltageNote1 Non-repetitive peak off-state voltageNote1 Symbol VDRM VDSM Voltage class 12 600 700 Unit V V REJ03G1562-0100 Page 1 of 7 Rev.1.00 Jul 06, 2007 BCR16PM-12LD Parameter RMS on-state current Surge on-state current I2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction temperature Storage temperature Mass Isolation voltage Notes: 1. Gate open. Symbol IT (RMS) ITSM I2 t PGM PG (AV) VGM IGM Tj Tstg -- Viso Ratings 16 96 38 5 0.5 10 2 - 40 to +150 - 40 to +150 2.0 1500 Unit A A A2s W W V A C C g V Conditions Commercial frequency, sine full wave 360 conduction, Tc = 60C 60Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Typical value Ta = 25C, AC 1 minute, T1*T2*G terminal to case Electrical Characteristics Parameter Repetitive peak off-state current On-state voltage Gate trigger voltageNote2 Symbol IDRM VTM VFGT VRGT VRGT IFGT IRGT IRGT VGD Rth (j-c) (dv/dt)c Min. -- -- -- -- -- -- -- -- 0.2 -- 10 Typ. -- -- -- -- -- -- -- -- -- -- -- Max. 2.0 1.75 1.5 1.5 1.5 50 50 50 -- 4.1 -- Unit mA V V V V mA mA mA V C/W V/s Test conditions Tj = 125C, VDRM applied Tc = 25C, ITM = 25 A, Instantaneous measurement Tj = 25C, VD = 6 V, RL = 6 , RG = 330 Tj = 25C, VD = 6 V, RL = 6 , RG = 330 Tj = 125C, VD = 1/2 VDRM Junction to caseNote3 Tj = 125C Gate trigger currentNote2 Gate non-trigger voltage Thermal resistance Critical-rate of rise of off-state Note4 commutating voltage Notes: 2. Measurement using the gate trigger characteristics measurement circuit. 3. The contact thermal resistance Rth (c-f) in case of greasing is 0.5C/W. 4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below. Commutating voltage and current waveforms (inductive load) Supply Voltage Time (di/dt)c Time Time VD Test conditions 1. Junction temperature Tj = 125C 2. Rate of decay of on-state commutating current (di/dt)c = - 8 A/ms 3. Peak off-state voltage VD = 400 V Main Current Main Voltage (dv/dt)c REJ03G1562-0100 Page 2 of 7 Rev.1.00 Jul 06, 2007 BCR16PM-12LD Performance Curves Maximum On-State Characteristics 10 7 Tj = 25C 5 3 2 101 7 5 3 2 10 7 5 3 2 10 -1 0 2 Rated Surge On-State Current 120 Surge On-State Current (A) On-State Current (A) 100 80 60 40 20 00 10 1 2 0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8 23 5 7 10 23 5 7 10 On-State Voltage (V) Conduction Time (Cycles at 60Hz) Gate Voltage (V) 102 7 5 3 2 10 7 5 3 2 10 7 5 3 2 0 1 Gate Trigger Current (Tj = tC) x 100 (%) Gate Trigger Current (Tj = 25C) Gate Characteristics (I, II and III) Gate Trigger Current vs. Junction Temperature 103 7 5 3 2 102 7 5 3 2 IFGTI Typical Example IRGTIII VGM = 10 V PGM = 5 W PG(AV) = 0.5 W IGM = 2 A IFGT I IRGT I IRGT III VGD = 0.2 V VGT = 1.5 V IRGTI 10-1 1 10 2 3 5 7102 2 3 5 7103 2 3 5 7104 101 -60 -40-20 0 20 40 60 80 100120 140160 Gate Current (mA) Junction Temperature (C) Gate Trigger Voltage (Tj = tC) x 100 (%) Gate Trigger Voltage (Tj = 25C) Gate Trigger Voltage vs. Junction Temperature 10 7 5 3 2 102 7 5 3 2 10 -60 -40-20 0 20 40 60 80 100120140160 1 Maximum Transient Thermal Impedance Characteristics (Junction to case) Transient Thermal Impedance (C/W) 10 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 -1 10 2 3 5 7100 2 3 5 7101 2 3 5 7102 2 3 2 3 5 7103 2 3 5 7 104 Typical Example Junction Temperature (C) Conduction Time (Cycles at 60 Hz) REJ03G1562-0100 Page 3 of 7 Rev.1.00 Jul 06, 2007 BCR16PM-12LD Maximum Transient Thermal Impedance Characteristics (Junction to ambient) Maximum On-State Power Dissipation 25 Transient Thermal Impedance (C/W) 10 7 5 3 2 102 7 5 3 2 101 7 5 3 2 100 7 5 3 2 10-1 1 3 On-State Power Dissipation (W) 5 No Fins 20 360 Conduction Resistive, 15 inductive loads 10 5 0 0 10 2 3 5 710 2 3 5 710 2 3 5 710 2 3 5 710 2 3 4 2 4 6 8 10 12 14 16 18 20 Conduction Time (Cycles at 60Hz) RMS On-State Current (A) Allowable Case Temperature vs. RMS On-State Current 160 Curves apply regardless of conduction angle Allowable Ambient Temperature vs. RMS On-State Current 160 All fins are black painted aluminum and greased 120 x 120 x t2.3 100 x 100 x t2.3 60 x 60 x t2.3 Ambient Temperature (C) Case Temperature (C) 140 120 100 80 60 40 140 120 100 80 60 Curves apply 360 Conduction 20 Resistive, inductive loads 40 conduction angle 20 inductive loads 0 0 Natural convection Resistive, regardless of 0 0 2 4 6 8 10 12 14 16 18 20 2 4 6 8 10 12 14 16 18 20 RMS On-State Current (A) RMS On-State Current (A) Repetitive Peak Off-State Current (Tj = tC) x 100 (%) Repetitive Peak Off-State Current (Tj = 25C) Allowable Ambient Temperature vs. RMS On-State Current 160 Natural convection No Fins Curves apply regardless of conduction angle Resistive, inductive loads Repetitive Peak Off-State Current vs. Junction Temperature 106 7 5 3 2 105 7 5 3 2 104 7 5 3 2 103 7 5 3 2 102 Typical Example Ambient Temperature (C) 140 120 100 80 60 40 20 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 -60 -40-20 0 20 40 60 80 100120140160 RMS On-State Current (A) Junction Temperature (C) REJ03G1562-0100 Page 4 of 7 Rev.1.00 Jul 06, 2007 BCR16PM-12LD Holding Current vs. Junction Temperature Holding Current (Tj = tC) x 100 (%) Holding Current (Tj = 25C) 103 7 5 3 2 102 7 5 3 2 101 -60 -40-20 0 20 40 60 80 100 120140 160 Typical Example Latching Current vs. Junction Temperature 103 7 5 3 2 102 7 5 3 2 101 7 T2+, G+ 5 Typical Example 3 2 10 0 Distribution Latching Current (mA) T2+, G- Typical Example T2-, G- Typical Example -60 -40 -20 0 20 40 60 80 100 120 140160 Junction Temperature (C) Junction Temperature (C) Breakover Voltage (dv/dt = xV/s) x 100 (%) Breakover Voltage (dv/dt = 1V/s) Breakover Voltage vs. Junction Temperature Breakover Voltage (Tj = tC) x 100 (%) Breakover Voltage (Tj = 25C) 160 Typical Example Breakover Voltage vs. Rate of Rise of Off-State Voltage (Tj = 125C) 160 140 120 100 80 60 40 20 01 2 3 4 10 2 3 5 710 2 3 5 710 2 3 5 710 I Quadrant Typical Example Tj = 125C III Quadrant 140 120 100 80 60 40 20 0 -60 -40-20 0 20 40 60 80 100120 140160 Junction Temperature (C) Rate of Rise of Off-State Voltage (V/s) Breakover Voltage (dv/dt = xV/s) x 100 (%) Breakover Voltage (dv/dt = 1V/s) Breakover Voltage vs. Rate of Rise of Off-State Voltage (Tj = 150C) 160 140 120 100 80 60 40 20 01 10 2 3 5 7102 2 3 5 7103 2 3 5 7104 I Quadrant Commutation Characteristics (Tj = 125C) Critical Rate of Rise of Off-State Commutating Voltage (V/s) 7 5 3 2 10 7 5 1 Time Main Voltage (dv/dt)c VD Main Current (di/dt)c IT Time Typical Example Tj = 150C III Quadrant III Quadrant I Quadrant Minimum Characteristics Value 3 2 Typical Example 10 70 10 0 Tj = 125C, IT = 4 A = 500 s, VD = 200 V f = 3 Hz 23 5 7 101 23 5 7 102 Rate of Rise of Off-State Voltage (V/s) Rate of Decay of On-State Commutating Current (A/ms) REJ03G1562-0100 Page 5 of 7 Rev.1.00 Jul 06, 2007 BCR16PM-12LD Gate Trigger Current vs. Gate Current Pulse Width Gate Trigger Current (tw) x 100 (%) Gate Trigger Current (DC) 103 7 5 3 2 102 7 5 3 2 101 0 10 23 5 7 101 23 5 7 102 IRGT III IRGT I IFGT I Typical Example Commutation Characteristics (Tj = 150C) Critical Rate of Rise of Off-State Commutating Voltage (V/s) 7 5 Typical Example Tj = 150C 3 IT = 4 A 2 = 500 s VD = 200 V 1 f = 3 Hz Time Main Voltage (dv/dt)c VD Main Current (di/dt)c IT Time 10 7 5 3 2 III Quadrant I Quadrant 100 70 10 23 5 7 101 23 5 7 102 Rate of Decay of On-State Commutating Current (A/ms) Gate Current Pulse Width (s) Gate Trigger Characteristics Test Circuits 6 6 6V V A 330 6V V A 330 Test Procedure I 6 Test Procedure II 6V V A 330 Test Procedure III REJ03G1562-0100 Page 6 of 7 Rev.1.00 Jul 06, 2007 BCR16PM-12LD Package Dimensions Package Name TO-220F JEITA Package Code SC-67 RENESAS Code PRSS0003AA-A Previous Code MASS[Typ.] 2.0g Unit: mm 10.5Max 5.2 2.8 5.0 1.2 17 3.2 0.2 13.5Min 3.6 1.3Max 0.8 2.54 2.54 8.5 0.5 2.6 Order Code Lead form Straight type Lead form Standard packing Vinyl sack Plastic Magazine (Tube) Quantity 100 50 Standard order code Type name Type name - Lead forming code Standard order code example BCR16PM-12LD BCR16PM-12LD -A8 Note : Please confirm the specification about the shipping in detail. REJ03G1562-0100 Page 7 of 7 Rev.1.00 Jul 06, 2007 4.5 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Notes: 1. This document is provided for reference purposes only so that Renesas customers may select the appropriate Renesas products for their use. Renesas neither makes warranties or representations with respect to the accuracy or completeness of the information contained in this document nor grants any license to any intellectual property rights or any other rights of Renesas or any third party with respect to the information in this document. 2. Renesas shall have no liability for damages or infringement of any intellectual property or other rights arising out of the use of any information in this document, including, but not limited to, product data, diagrams, charts, programs, algorithms, and application circuit examples. 3. You should not use the products or the technology described in this document for the purpose of military applications such as the development of weapons of mass destruction or for the purpose of any other military use. When exporting the products or technology described herein, you should follow the applicable export control laws and regulations, and procedures required by such laws and regulations. 4. All information included in this document such as product data, diagrams, charts, programs, algorithms, and application circuit examples, is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas products listed in this document, please confirm the latest product information with a Renesas sales office. Also, please pay regular and careful attention to additional and different information to be disclosed by Renesas such as that disclosed through our website. (http://www.renesas.com ) 5. Renesas has used reasonable care in compiling the information included in this document, but Renesas assumes no liability whatsoever for any damages incurred as a result of errors or omissions in the information included in this document. 6. When using or otherwise relying on the information in this document, you should evaluate the information in light of the total system before deciding about the applicability of such information to the intended application. Renesas makes no representations, warranties or guaranties regarding the suitability of its products for any particular application and specifically disclaims any liability arising out of the application and use of the information in this document or Renesas products. 7. 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Notwithstanding the preceding paragraph, you should not use Renesas products for the purposes listed below: (1) artificial life support devices or systems (2) surgical implantations (3) healthcare intervention (e.g., excision, administration of medication, etc.) (4) any other purposes that pose a direct threat to human life Renesas shall have no liability for damages arising out of the uses set forth in the above and purchasers who elect to use Renesas products in any of the foregoing applications shall indemnify and hold harmless Renesas Technology Corp., its affiliated companies and their officers, directors, and employees against any and all damages arising out of such applications. 9. You should use the products described herein within the range specified by Renesas, especially with respect to the maximum rating, operating supply voltage range, movement power voltage range, heat radiation characteristics, installation and other product characteristics. Renesas shall have no liability for malfunctions or damages arising out of the use of Renesas products beyond such specified ranges. 10. Although Renesas endeavors to improve the quality and reliability of its products, IC products have specific characteristics such as the occurrence of failure at a certain rate and malfunctions under certain use conditions. Please be sure to implement safety measures to guard against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of a Renesas product, such as safety design for hardware and software including but not limited to redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other applicable measures. Among others, since the evaluation of microcomputer software alone is very difficult, please evaluate the safety of the final products or system manufactured by you. 11. In case Renesas products listed in this document are detached from the products to which the Renesas products are attached or affixed, the risk of accident such as swallowing by infants and small children is very high. You should implement safety measures so that Renesas products may not be easily detached from your products. Renesas shall have no liability for damages arising out of such detachment. 12. This document may not be reproduced or duplicated, in any form, in whole or in part, without prior written approval from Renesas. 13. Please contact a Renesas sales office if you have any questions regarding the information contained in this document, Renesas semiconductor products, or if you have any other inquiries. RENESAS SALES OFFICES Refer to "http://www.renesas.com/en/network" for the latest and detailed information. Renesas Technology America, Inc. 450 Holger Way, San Jose, CA 95134-1368, U.S.A Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501 Renesas Technology Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K. Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900 Renesas Technology (Shanghai) Co., Ltd. Unit 204, 205, AZIACenter, No.1233 Lujiazui Ring Rd, Pudong District, Shanghai, China 200120 Tel: <86> (21) 5877-1818, Fax: <86> (21) 6887-7898 Renesas Technology Hong Kong Ltd. 7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong Tel: <852> 2265-6688, Fax: <852> 2730-6071 Renesas Technology Taiwan Co., Ltd. 10th Floor, No.99, Fushing North Road, Taipei, Taiwan Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999 Renesas Technology Singapore Pte. Ltd. 1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632 Tel: <65> 6213-0200, Fax: <65> 6278-8001 Renesas Technology Korea Co., Ltd. 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