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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD313 DESCRIPTION *With TO-220C package *Complement to type 2SB507 *Low collector saturation voltage APPLICATIONS *Designed for the output stage of 15W to 25W AF power amplifier PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION * Absolute maximum ratings(Ta=25) SYMBOL VCBO VCEO VEBO IC ICM IB B PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-Peak Base current Collector dissipation Junction temperature Storage temperature TC=25 Open emitter Open base CONDITIONS VALUE 60 60 5 3 8 1 30 150 -50~150 UNIT V V V A A A W Open collector PC Tj Tstg THERMAL CHARACTERISTICS SYMBOL Rjc CHARACTERISTICS Thermal resistance junction to case MAX 4.16 UNIT /W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL VCEO VCEsat VBE ICBO ICEO IEBO hFE-1 hFE-2 fT PARAMETER Collector-emitter voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=10mA; IB=0 IC=2A; IB=0.2A IC=1A ; VCE=2V VCB=60V; IE=0 VCE=60V; IB=0 VEB=5V; IC=0 IC=1A ; VCE=2V IC=0.1A ; VCE=2V IC=0.5A ; VCE=5V 40 40 5 MIN 60 TYP. 2SD313 MAX UNIT V 1.0 1.5 0.1 5 1 320 V V mA mA mA MHz hFE-1Classifications C 40-80 D 60-120 E 100-200 F 160-320 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD313 Fig.2 Outline dimensions (unindicated tolerance:0.10mm) 3 |
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