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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4138 DESCRIPTION *High Collector-Emitter Breakdown Voltage: V(BR)CEO= 400V(Min) *High Switching Speed *High Reliability APPLICATIONS *Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base voltage IC Collector Current-Continuous w ww scs .i UNIT 500 V 400 V 10 V 10 A 20 A 4 A .cn mi e ICM Collector Current-Peak IB B Base Current-Continuous Collector Power Dissipation @ TC=25 Junction Temperature PC 80 W TJ 150 Tstg Storage Temperature Range -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC4138 TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 25mA ; IB= 0 400 V VCE(sat) Collector-Emitter Saturation Voltage IC= 6A; IB= 1.2A B 0.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 6A; IB= 1.2A B 1.3 V ICBO Collector Cutoff Current VCB= 500V ; IE= 0 0.1 mA IEBO Emitter Cutoff Current VEB= 10V; IC= 0 0.1 mA hFE DC Current Gain IC= 6A ; VCE= 4V COB Output Capacitance fT Current-Gain--Bandwidth Product Switching Times ton Turn-on Time tstg Storage Time w w scs .i w IE= 0 ; VCB= 10V; ftest=1.0MHz IE= -0.7A ; VCE= 12V .cn mi e 10 30 85 pF 10 MHz 1.0 s IC= 6A,IB1= 0.6A; IB2= -1.2A RL= 33.3; VCC= 200V 3.0 s tf Fall Time 0.5 s isc Websitewww.iscsemi.cn 2 |
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