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| Inchange Semiconductor Product Specification Silicon PNP Power Transistors TIP32/32A/32B/32C DESCRIPTION With TO-220C package Complement to type TIP31/31A/31B/31C APPLICATIONS Medium power linear and switching applications PINNING PIN 1 2 3 Emitter Collector;connected to mounting base Base DESCRIPTION Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO IN PARAMETER CONDITIONS TIP32 TIP32A Collector-base voltage VCEO Collector-emitter voltage HAN C SEM GE TIP32B TIP32C TIP32 TIP32A Open base TIP32B TIP32C Open emitter OND IC TOR UC VALUE -40 -60 -80 -100 -40 -60 UNIT V V -80 -100 VEBO IC ICM IB PC Tj Tstg Emitter-base voltage Collector current (DC) Collector current-Pulse Base current Open collector -5 -3 -5 -1 V A A A W TC=25ae Collector power dissipation Ta=25ae Junction temperature Storage temperature 40 2 150 -65~150 ae ae Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER TIP32 TIP32A IC=-30mA; IB=0 TIP32B TIP32C VCEsat VBE Collector-emitter saturation voltage Base-emitter on voltage TIP32 TIP32A TIP32B TIP32C TIP32/32A IC=-3A ;IB=-0.375A IC=-3A ; VCE=-4V VCE=-40V; VEB=0 VCE=-60V; VEB=0 CONDITIONS TIP32/32A/32B/32C SYMBOL MIN -40 -60 TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage V -80 -100 -1.2 -1.8 V V ICES Collector cut-off current ICEO IEBO hFE-1 hFE-2 fT -0.2 VCE=-80V; VEB=0 VCE=-100V; VEB=0 mA Collector cut-off current Emitter cut-off current DC current gain DC current gain Transiton frequency IN ANG CH TIP32B/32C SEM E VCE=-30V; IB=0 VCE=-60V; IB=0 VEB=-5V; IC=0 OND IC 25 10 3 TOR UC -0.3 mA -1.0 mA IC=-1A ; VCE=-4V IC=-3A ; VCE=-4V IC=-0.5A ; VCE=-10V 50 MHz 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE TIP32/32A/32B/32C SEM GE HAN INC OND IC TOR UC Fig.2 Outline dimensions (unindicated tolerance:A 0.10 mm) 3 Inchange Semiconductor Product Specification Silicon PNP Power Transistors TIP32/32A/32B/32C SEM GE HAN INC OND IC TOR UC 4 |
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