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| SUD45P03-10 Vishay Siliconix P-Channel 30-V (D-S), MOSFET PRODUCT SUMMARY VDS (V) - 30 RDS(on) () 0.010 at VGS = - 10 V 0.018 at VGS = - 4.5 V ID (A)a - 15 - 12 FEATURES * TrenchFET(R) Power MOSFETs RoHS COMPLIANT S TO-252 G Drain Connected to Tab G D S D Top View Ordering Information: SUD45P03-10-E3 (Lead (Pb)-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Currentb Pulsed Drain Current Continuous Source Current (Diode Conduction) Maximum Power Dissipationb Operating Junction and Storage Temperature Range TC = 25 C TA = 25 C TA = 25 C TA = 100 C Symbol VDS VGS ID IDM IS PD TJ, Tstg Limit - 30 20 - 15 -8 - 100 - 15 70 4b - 55 to 150 W C A Unit V THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb Maximum Junction-to-Case Symbol RthJA RthJC Typical Maximum 30 1.8 Unit C/W Notes: a. Calculated Rating for TA = 25 C, for comparison purposes only. This cannot be used as continuous rating (see Absolute Maximum Ratings and Typical Characteristics). b. Surface Mounted on FR4 board, t 10 s. Document Number: 70766 S-81734-Rev. E, 04-Aug-08 www.vishay.com 1 SUD45P03-10 Vishay Siliconix SPECIFICATIONS TJ = 25 C, unless otherwise noted Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta VDS VGS(th) IGSS IDSS ID(on) VGS = 0 V, ID = - 250 A VDS = VGS, ID = - 250 A VDS = 0 V, VGS = 20 V VDS = - 30 V, VGS = 0 V VDS = - 30 V, VGS = 0 V, TJ = 125 C VDS = - 5 V, VGS = - 10 V VDS = - 5 V, VGS = - 4.5 V VGS = - 10 V, ID = - 15 A Drain-Source On-State Resistance Forward Transconductancea Dynamic b a Symbol Test Conditions Min. - 30 - 1.0 Typ. Max. Unit - 3.0 100 -1 - 50 V nA A A - 50 - 20 0.010 0.015 0.018 20 6000 RDS(on) gfs Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf ISM VGS = - 10 V, ID = - 15 A, TJ = 125 C VGS = - 4.5 V, ID = - 15 A VDS = - 15 V, ID = - 15 A S Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Chargec Gate-Source Chargec Gate-Drain Charge Rise Timec Turn-Off Delay Timec Fall Timec Pulsed Current Diode Forward Voltage a c VGS = 0 V, VDS = - 25 V, f = 1 MHz 1100 700 90 150 pF VDS = - 15 V, VGS = - 10 V, ID = - 45 A 20 16 15 25 550 200 250 100 nC Turn-On Delay Timec VDD = - 15 V, RL = 0.33 ID - 45 A, VGEN = - 10 V, RG = 2.4 375 100 140 ns Source-Drain Diode Ratings and Characteristic TC = 25 C A V ns VSD trr IF = - 45 A, VGS = 0 V IF = - 45 A, dI/dt = 100 A/s 1.0 55 1.5 100 Source-Drain Reverse Recovery Time Notes: a. Pulse test; pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 70766 S-81734-Rev. E, 04-Aug-08 SUD45P03-10 Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 250 VGS = 10, 9, 8, 7 V 200 6V I D - Drain Current (A) I D - Drain Current (A) 150 5V 100 4V 50 3V 0 0 2 4 6 8 10 0 0 1 2 3 4 5 60 80 100 40 TC = 125 C 20 25 C - 55 C VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics 80 TC = - 55 C 60 25 C 125 C 40 R DS(on) - On-Resistance () g fs - Transconductance (S) 0.04 0.05 Transfer Characteristics 0.03 0.02 VGS = 4.5 V VGS = 10 V 20 0.01 0 0 10 20 30 40 50 0.00 0 20 40 60 80 100 ID - Drain Current (A) ID - Drain Current (A) Transconductance 8000 Ciss VGS - Gate-to-Source Voltage (V) 16 6000 C - Capacitance (pF) 20 On-Resistance vs. Drain Current VDS = 15 V ID = 45 A 12 4000 8 2000 Coss 4 Crss 0 0 5 10 15 20 25 30 0 0 30 60 90 120 VDS - Drain-to-Source Voltage (V) Qg - Total Gate Charge (nC) Capacitance Document Number: 70766 S-81734-Rev. E, 04-Aug-08 Gate Charge www.vishay.com 3 SUD45P03-10 Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 2.0 VGS = 10 V ID = 45 A 1.6 R DS(on) - On-Resistance (Normalized) I S - Source Current (A) TJ = 150 C TJ = 25 C 10 100 1.2 0.8 0.4 0.0 - 50 - 25 0 25 50 75 100 TJ - Junction Temperature (C) 125 150 1 0 0.3 0.6 0.9 1.2 VSD - Source-to-Drain Voltage (V) 1.5 On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage THERMAL RATINGS 20 500 16 100 I D - Drain Current (A) I D - Drain Current (A) Limited by R DS(on)* 10 10, 100 s 1 ms 10 ms 100 ms 12 8 1 4 1s TA = 25 C Single Pulse DC 0 0 25 50 75 100 125 150 TA - Ambient Temperature (C) 0.1 0.1 Maximum Drain Current vs. Ambient Temperature 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area 0.2 0.1 0.1 0.02 0.05 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 10 100 500 Normalized Thermal Transient Impedance, Junction-to-Ambient Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?70766. www.vishay.com 4 Document Number: 70766 S-81734-Rev. E, 04-Aug-08 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1 |
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