View MRF284_4326424.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

Freescale Semiconductor Technical Data
Document Number: MRF284 Rev. 17, 5/2006
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for PCN and PCS base station applications with frequencies from 1000 to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier applications. To be used in Class A and Class AB for PCN - PCS/cellular radio and wireless local loop. * Specified Two - Tone Performance @ 2000 MHz, 26 Volts Output Power = 30 Watts PEP Power Gain = 9 dB Efficiency = 30% Intermodulation Distortion = - 29 dBc * Typical Single - Tone Performance at 2000 MHz, 26 Volts Output Power = 30 Watts CW Power Gain = 9.5 dB Efficiency = 45% * Capable of Handling 10:1 VSWR, @ 26 Vdc, 2000 MHz, 30 Watts CW Output Power Features * Excellent Thermal Stability * Characterized with Series Equivalent Large - Signal Impedance Parameters * Low Gold Plating Thickness on Leads. L Suffix Indicates 40 Nominal. * RoHS Compliant * In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel. Table 1. Maximum Ratings
Rating Drain - Source Voltage Gate - Source Voltage Total Device Dissipation @ TC = 25C Derate above 25C Storage Temperature Range Case Operating Temperature Operating Junction Temperature Symbol VDSS VGS PD Tstg TC TJ
MRF284LR1 MRF284LSR1
2000 MHz, 30 W, 26 V LATERAL N - CHANNEL BROADBAND RF POWER MOSFETs
CASE 360B - 05, STYLE 1 NI - 360 MRF284LR1
CASE 360C - 05, STYLE 1 NI - 360S MRF284LSR1
Value - 0.5, +65 20 87.5 0.5 - 65 to +150 150 200
Unit Vdc Vdc W W/C C C C
Table 2. Thermal Characteristics
Characteristic Thermal Resistance, Junction to Case Symbol RJC Value 2.0 Unit C/W
Table 3. Electrical Characteristics (TC = 25C unless otherwise noted)
Characteristic Off Characteristics Drain - Source Breakdown Voltage (VGS = 0, ID = 10 Adc) Zero Gate Voltage Drain Current (VDS = 20 Vdc, VGS = 0) Gate - Source Leakage Current (VGS = 20 Vdc, VDS = 0) V(BR)DSS IDSS IGSS 65 -- -- -- -- -- -- 1.0 10 Vdc Adc Adc (continued) NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. Symbol Min Typ Max Unit
(c) Freescale Semiconductor, Inc., 2006. All rights reserved.
MRF284LR1 MRF284LSR1 1
RF Device Data Freescale Semiconductor
Table 3. Electrical Characteristics (TC = 25C unless otherwise noted) (continued)
Characteristic On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 150 Adc) Gate Quiescent Voltage (VDS = 26 Vdc, ID = 200 mAdc) Drain - Source On - Voltage (VGS = 10 Vdc, ID = 1.0 Adc) Forward Transconductance (VDS = 10 Vdc, ID = 1.0 Adc) Dynamic Characteristics Input Capacitance (VDS = 26 Vdc, VGS = 0, f = 1.0 MHz) Output Capacitance (VDS = 26 Vdc, VGS = 0, f = 1.0 MHz) Reverse Transfer Capacitance (VDS = 26 Vdc, VGS = 0, f = 1.0 MHz) Functional Tests (in Freescale Test Fixture, 50 ohm system) Common - Source Power Gain (VDD = 26 Vdc, Pout = 30 W, IDQ = 200 mA, f1 = 2000.0 MHz, f2 = 2000.1 MHz) Drain Efficiency (VDD = 26 Vdc, Pout = 30 W, IDQ = 200 mA, f1 = 2000.0 MHz, f2 = 2000.1 MHz) Intermodulation Distortion (VDD = 26 Vdc, Pout = 30 W, IDQ = 200 mA, f1 = 2000.0 MHz, f2 = 2000.1 MHz) Input Return Loss (VDD = 26 Vdc, Pout = 30 W, IDQ = 200 mA, f1 = 2000.0 MHz, f2 = 2000.1 MHz) Common - Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 200 mA, f1 = 1930.0 MHz, f2 = 1930.1 MHz) Drain Efficiency (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 200 mA, f1 = 1930.0 MHz, f2 = 1930.1 MHz) Intermodulation Distortion (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 200 mA, f1 = 1930.0 MHz, f2 = 1930.1 MHz) Input Return Loss (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 200 mA, f1 = 1930.0 MHz, f2 = 1930.1 MHz) Common - Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 30 W CW, IDQ = 200 mA, f1 = 2000.0 MHz) Drain Efficiency (VDD = 26 Vdc, Pout = 30 W CW, IDQ = 200 mA, f1 = 2000.0 MHz) Gps 9 10.5 -- dB Ciss Coss Crss -- -- -- 43 23 1.4 -- -- -- pF pF pF VGS(th) VGS(q) VDS(on) gfs 2.0 3.0 -- -- 3.0 4.0 0.3 1.5 4.0 5.0 0.6 -- Vdc Vdc Vdc S Symbol Min Typ Max Unit
30
35
--
%
IMD
--
- 32
- 29
dBc
IRL
--
- 15
-9
dB
Gps
9
10.4
--
dB
--
35
--
%
IMD
--
- 34
--
dBc
IRL
--
- 15
-9
dB
Gps
8.5
9.5
--
dB
35
45
--
%
MRF284LR1 MRF284LSR1 2 RF Device Data Freescale Semiconductor
VGG + C3
R1 W1 C4
R2
R3
R5
R6 W2 C12
R7 W3 C14
VDD + C17 + C18
B1 C6 R4
B2 C7 C15 C13
B3
L1 Z10 RF INPUT Z1 Z2 C1 Z3 C2 C5 Z4 Z5 Z6 Z7 C8 Z8 C9 DUT Z9 C10 Z11 Z12 Z13 C11
L2
L3 RF OUTPUT
Z14
Z15 C16
Z16
Z17
Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 Z10
0.530 x 0.080 Microstrip 0.255 x 0.080 Microstrip 0.600 x 0.080 Microstrip 0.525 x 0.080 Microstrip 0.015 x 0.325 Microstrip 0.085 x 0.325 Microstrip 0.165 x 0.325 Microstrip 0.110 x 0.515 Microstrip 0.095 x 0.515 Microstrip 0.050 x 0.515 Microstrip
Z11 Z12 Z13 Z14 Z15 Z16 Z17 PCB
0.155 x 0.515 Microstrip 0.120 x 0.325 Microstrip 0.150 x 0.325 Microstrip 0.010 x 0.325 Microstrip 0.505 x 0.080 Microstrip 0.865 x 0.080 Microstrip 0.525 x 0.080 Microstrip Arlon GX0300 - 55 - 22, 0.030, r = 2.55
Figure 1. 1930 - 2000 MHz Broadband Test Circuit Schematic Table 4. 1930 - 2000 MHz Broadband Test Circuit Component Designations and Values
Designators B1 - B3 C1, C2, C8 C3, C17 C4, C14 C5 C6, C12 C7, C13 C9 C10 C11 C15, C16 C18 L1, L2 L3 R1, R2, R3, R5, R6, R7 R4 W1, W2, W3 WS1, WS2 Description Ferrite Beads, Round, Ferroxcube #56 - 590 - 65 - 3B 0.8 - 8.0 pF Gigatrim Variable Capacitors, Johanson #27291SL 22 mF, 35 V Tantalum Surface Mount Chip Capacitors, Kemet #T491X226K035AS4394 0.1 mF Chip Capacitors, Kemet #CDR33BX104AKWS 220 pF Chip Capacitor, ATC #100B221KP500X 1000 pF Chip Capacitors, ATC #100B102JCA50X 5.1 pF Chip Capacitors, ATC #100B5R1CCA500X 1.2 pF Chip Capacitor, ATC #100B1R2CCA500X 2.7 pF Chip Capacitor, ATC #100B2R7CCA500X 0.6 - 4.5 pF Gigatrim Variable Capacitors, Johanson #27271SL 200 pF Chip Capacitors, ATC #100B201KP500X 10 mF, 35 V Tantalum Surface Mount Chip Capacitor, Kemet #T495X106K035AS4394 4 Turns, #24 AWG, 0.120 OD, 0.140 Long, (12.5 nH), Coilcraft #A04T - 5 2 Turns, #24 AWG, 0.120 OD, 0.140 Long, (5.0 nH), Coilcraft #A02T - 5 12 , 1/4 W Chip Resistors, 0.08 x 0.13, Garrett Instruments #RM73B2B120JT 560 k, 1/4 W Chip Resistor, 0.08 x 0.13 Solid Copper Buss Wire, 16 AWG Beryllium Copper Wear Blocks 0.005 x 0.250 x 0.250
MRF284LR1 MRF284LSR1 RF Device Data Freescale Semiconductor 3
C4 R1 W1 B1 R2
C6
C12 W2
C14 W3 R6 R7
C17
R3
R4
B3 R5
B2 C3 C7 L1 C5 WS1 WS2 C9 C10 L2 C13
C18 C15 C16 L3
C1
C2 C8
C11
MRF284 Rev - 0
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product.
Figure 2. 1930 - 2000 MHz Broadband Test Circuit Component Layout
MRF284LR1 MRF284LSR1 4 RF Device Data Freescale Semiconductor
VSUPPLY + R1 R3 P1 Q1 R2 R4 Q2 R5 R6 + C9 C7 R7 C8 R8 C2 C4 C11 C13 R9 C10 R10 R11 C15 C16 VDD C1 B3 B1 B2 + B4 B5 VDD
L4 RF OUTPUT
L1 RF INPUT Z1 Z2 Z3 C3 L2 C5 Z4 Z5
L3 Z6 Z7 Z8 Z9 DUT
Z10
Z11
Z12
Z13
Z14 C14
Z15
Z16
C12 C6
C17
Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9
0.363 x 0.080 Microstrip 0.080 x 0.080 Microstrip 0.916 x 0.080 Microstrip 0.517 x 0.080 Microstrip 0.050 x 0.325 Microstrip 0.050 x 0.325 Microstrip 0.071 x 0.325 Microstrip 0.125 x 0.325 Microstrip 0.210 x 0.515 Microstrip
Z10 Z11 Z12 Z13 Z14 Z15 Z16 PCB
0.210 x 0.515 Microstrip 0.235 x 0.325 Microstrip 0.02 x 0.325 Microstrip 0.02 x 0.325 Microstrip 0.510 x 0.080 Microstrip 0.990 x 0.080 Microstrip 0.390 x 0.080 Microstrip Arlon GX0300 - 55 - 22, 0.030, r = 2.55
Figure 3. 2000 MHz Class A Test Circuit Schematic
MRF284LR1 MRF284LSR1 RF Device Data Freescale Semiconductor 5
Table 5. 2000 MHz Class A Test Circuit Component Designations and Values
Designators B1 - B5 C1, C9, C16 C2, C13 C3, C14 C4, C11 C5 C6 C7, C15 C8 C10 C12, C17 L1 L2 L3, L4 P1 Q1 Q2 R1 R2 R3 R4 R5 R6 R7 - R11 Description Ferrite Beads, Round, Ferroxcube # 56 - 590 - 65 - 3B 100 F, 50 V Electrolytic Capacitors, Mallory #SME50VB101M12X25L 51 pF Chip Capacitors, ATC #100B510JCA500x 10 pF Chip Capacitors, ATC #100B100JCA500X 12 pF Chip Capacitors, ATC #100B120JCA500X 0.8 - 8.0 pF Variable Capacitor, Johansen Gigatrim #27291SL 4.7 pF Chip Capacitor, ATC #100B4R7CCA500X 91 pF Chip Capacitors, ATC #100B910KP500X 1000 pF Chip Capacitor, ATC #100B102JCA50X 0.1 F Chip Capacitor, Kemet #CDR33BX104AKWS 0.6 - 4.5 pF Variable Capacitors, Johansen Gigatrim #27271SL 4 Turns, #27 AWG, 0.087 OD, 0.050 ID, 0.069 Long, 10 nH 5 Turns, #24 AWG, 0.083 OD, 0.040 ID, 0.128 Long, 12.5 nH 9 Turns, #26 AWG, 0.080 OD, 0.046 ID, 0.170 Long, 30.8 nH 1000 Potentiometer, 1/2 W, 10 Turns, Bourns Transistor, NPN, #MJD31, Case 369A - 10 Transistor, PNP, #MJD32, Case 369A - 10 360 , Fixed Film Chip Resistor, 0.08 x 0.13, Garrett Instruments #RM73B2B361JT 2 x 12 k, Fixed Film Chip Resistor, 0.08 x 0.13, Garrett Instruments #RM73B2B122JT 1 , Wirewound, 5 W, 3% Resistor, Dale # RE60G1R00 4 x 6.8 k, Fixed Film Chip Resistor, 0.08 x 0.13, Garrett Instruments #RM73B2B682JT 2 x 1500 , Fixed Film Chip Resistor, 0.08 x 0.13, Garrett Instruments #RM73B2B152JT 270 , Fixed Film Chip Resistor, 0.08 x 0.13, Garrett Instruments #RM73B2B271JT 12 , Fixed Film Chip Resistors, 0.08 x 0.13, Garrett Instruments #RM73B2B120JT
MRF284LR1 MRF284LSR1 6 RF Device Data Freescale Semiconductor
TYPICAL CHARACTERISTICS
40 Pout , OUTPUT POWER (WATTS) 35 30 25 20 15 10 5 0 0 0.5 1.0 VDD = 26 Vdc IDQ = 200 mA f = 2000 MHz Single Tone 3.0 1.5 2.5 2.0 Pin, INPUT POWER (WATTS) 3.5 Gps Pout 14 Pout , OUTPUT POWER (WATTS) 13 12 G ps , GAIN (dB) 11 10 9 8 7 6 4.0 45 4W 40 3W 35 2W 30 25 Pin = 1 W 20 15 VDD = 26 Vdc IDQ = 200 mA Single Tone
10 1800 1820 1840 1860 1880 1900 1920 1940 1960 1980 2000 f, FREQUENCY (MHz)
Figure 4. Output Power & Power Gain versus Input Power
Figure 5. Output Power versus Frequency
IMD, INTERMODULATION DISTORTION (dBc)
- 50 - 60 - 70 - 80
3rd Order 5th Order 7th Order
G ps , GAIN (dB)
VDD = 26 Vdc IDQ = 200 mA - 30 f = 2000.0 MHz 1 f2 = 2000.1 MHz - 40
11 Gps 10 9 8 7 6 16 Pout = 30 W (PEP) IDQ = 200 mA f1 = 2000.0 MHz f2 = 2000.1 MHz 18 20 22 24 VDD, DRAIN SUPPLY VOLTAGE (Vdc) 26 IMD
-15 -20 -25 -30 -35 -40 28
0.1
1.0 10 Pout, OUTPUT POWER (WATTS) PEP
Figure 6. Intermodulation Distortion Products versus Output Power
Figure 7. Power Gain and Intermodulation Distortion versus Supply Voltage
IMD, INTERMODULATION DISTORTION (dBc)
- 20 VDD = 26 Vdc f1 = 2000.0 MHz f2 = 2000.1 MHz 100 mA - 40 300 mA 200 mA - 50 IDQ = 400 mA - 60 0.1 1.0 10
13 IDQ = 400 mA G ps , POWER GAIN (dB) 12 300 mA
- 30
200 mA
11
10
9
100 mA
8 0.1
VDD = 26 Vdc f1 = 2000.0 MHz f2 = 2000.1 MHz 1.0 10 Pout, OUTPUT POWER (WATTS) PEP
Pout, OUTPUT POWER (WATTS) PEP
Figure 8. Intermodulation Distortion versus Output Power
Figure 9. Power Gain versus Output Power
MRF284LR1 MRF284LSR1 RF Device Data Freescale Semiconductor 7
IMD, INTERMODULATION DISTORTION (dBc)
- 20
12
-10
TYPICAL CHARACTERISTICS
3 Tflange = 75C ID, DRAIN CURRENT (Adc) C, CAPACITANCE (pF) Tflange = 100C 2 100 Ciss
Coss 10
1 TJ = 175C 0 0 4 8 12 16 20 24 28 VDD, DRAIN SUPPLY VOLTAGE (Vdc)
Crss 1 0 4 8 12 16 20 24 VDS, DRAIN SOURCE VOLTAGE (VOLTS) 28
Figure 10. DC Safe Operating Area
Figure 11. Capacitance versus Drain Source Voltage
EFFICIENCY (%) 3.0 INTERMODULATION DISTORTION (dBc) INPUT VSWR 2.0 1.0 11 45 Gps VDD = 26 Vdc Pout = 30 W (PEP), IDQ = 200 mA Two-Tone Frequency Delta = 100 kHz IMD 40 35 30 -32
60 50 40 30 20 10 0 -10 -20 -30 - 40 - 50 -60 -70 -80 -90
Pout , OUTPUT POWER (dBm)
FUNDAMENTAL
10 9 Gps, GAIN (dB) VDD = 26 Vdc IDQ = 1.8 Adc f1 = 2000.0 MHz f2 = 2000.1 MHz 8 7 6 5 4 3 60 1920
3rd Order
-36 VSWR 1940 1960 f, FREQUENCY (MHz) 1980 -40 2000
0
5
10
15
20 25 30 35 40 Pin, INPUT POWER (dBm)
45
50
55
Figure 12. Class A Third Order Intercept Point
1.E+10 MTTF FACTOR (HOURS x AMPS 2) 1.E+09 1.E+08 1.E+07 1.E+06 1.E+05 1.E+04 0 50
Figure 13. 1920 - 2000 MHz Broadband Circuit Performance
100 150 200 TJ, JUNCTION TEMPERATURE (C)
250
This graph displays calculated MTTF in hours x ampere2 drain current. Life tests at elevated temperature have correlated to better than 10% of the theoretical prediction for metal failure. Divide MTTF factor by ID2 for MTTF in a particular application.
Figure 14. MTTF Factor versus Junction Temperature
MRF284LR1 MRF284LSR1 8 RF Device Data Freescale Semiconductor
1800 MHz
1800 MHz
Zload f = 2000 MHz
Zsource Zo = 5
f = 2000 MHz
VCC = 26 V, IDQ = 200 mA, Pout = 15 W Avg. f MHz 1800 1860 1900 1960 2000 Zsource 1.0 - j0.4 1.0 - j0.8 1.0 - j1.1 1.0 - j1.4 1.0 - j2.3 Zload 2.1 + j0.4 2.2 - j0.2 2.3 - j0.5 2.5 - j0.9 2.6 - j0.92
Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground.
Input Matching Network
Device Under Test
Output Matching Network
Z
source
Z
load
Figure 15. Series Equivalent Source and Load Impedence
MRF284LR1 MRF284LSR1 RF Device Data Freescale Semiconductor 9
NOTES
MRF284LR1 MRF284LSR1 10 RF Device Data Freescale Semiconductor
PACKAGE DIMENSIONS
2X
B
G
1
Q aaa
M
TA
M
B
M
NOTES: 1. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M-1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. INCHES MIN MAX 0.795 0.805 0.225 0.235 0.125 0.175 0.210 0.220 0.055 0.065 0.004 0.006 0.562 BSC 0.077 0.087 0.220 0.250 0.355 0.365 0.357 0.363 0.125 0.135 0.227 0.233 0.225 0.235 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 20.19 20.45 5.72 5.97 3.18 4.45 5.33 5.59 1.40 1.65 0.10 0.15 14.28 BSC 1.96 2.21 5.59 6.35 9.02 9.27 9.07 9.22 3.18 3.43 5.77 5.92 5.72 5.97 0.13 REF 0.25 REF 0.38 REF
3 (FLANGE) 2X
B
2
D bbb M T A
2X M
K
(LID)
B
M
R
ccc N ccc
M
M
TA
M
B
M
(LID)
TA C
M
B
M
H
F
E
(INSULATOR)
S
T
(INSULATOR)
SEATING PLANE
aaa TA
M
M
TA
M
B
M
DIM A B C D E F G H K M N Q R S aaa bbb ccc
M
bbb
M
B
M
A
A
CASE 360B - 05 ISSUE G NI - 360 MRF284LR1
STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE
A B
(FLANGE)
A
1 NOTES: 1. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M-1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY.
(FLANGE)
B
2 2X
D
M
2X
K
M
bbb
TA
M
B
(LID)
R
ccc
(LID)
M
TA
M
B F
M
N
H
M
ccc E
TA
M
B
M
C PIN 3 bbb
M
(INSULATOR)
S
(INSULATOR)
M
T
M
SEATING PLANE M
aaa
M
TA
M
B
M
DIM A B C D E F H K M N R S aaa bbb ccc
INCHES MIN MAX 0.375 0.385 0.225 0.235 0.105 0.155 0.210 0.220 0.035 0.045 0.004 0.006 0.057 0.067 0.085 0.115 0.355 0.365 0.357 0.363 0.227 0.23 0.225 0.235 0.005 REF 0.010 REF 0.015 REF
MILLIMETERS MIN MAX 9.53 9.78 5.72 5.97 2.67 3.94 5.33 5.59 0.89 1.14 0.10 0.15 1.45 1.70 2.16 2.92 9.02 9.27 9.07 9.22 5.77 5.92 5.72 5.97 0.13 REF 0.25 REF 0.38 REF
TA
B
CASE 360C - 05 ISSUE E NI - 360S MRF284LSR1
STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE
MRF284LR1 MRF284LSR1 RF Device Data Freescale Semiconductor 11
How to Reach Us:
Home Page: www.freescale.com E - mail: support@freescale.com USA/Europe or Locations Not Listed: Freescale Semiconductor Technical Information Center, CH370 1300 N. Alma School Road Chandler, Arizona 85224 +1 - 800 - 521 - 6274 or +1 - 480 - 768 - 2130 support@freescale.com Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) support@freescale.com Japan: Freescale Semiconductor Japan Ltd. Headquarters ARCO Tower 15F 1 - 8 - 1, Shimo - Meguro, Meguro - ku, Tokyo 153 - 0064 Japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com Asia/Pacific: Freescale Semiconductor Hong Kong Ltd. Technical Information Center 2 Dai King Street Tai Po Industrial Estate Tai Po, N.T., Hong Kong +800 2666 8080 support.asia@freescale.com For Literature Requests Only: Freescale Semiconductor Literature Distribution Center P.O. Box 5405 Denver, Colorado 80217 1 - 800 - 441 - 2447 or 303 - 675 - 2140 Fax: 303 - 675 - 2150 LDCForFreescaleSemiconductor@hibbertgroup.com
Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. Freescale Semiconductor reserves the right to make changes without further notice to any products herein. Freescale Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Freescale Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters that may be provided in Freescale Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals", must be validated for each customer application by customer's technical experts. Freescale Semiconductor does not convey any license under its patent rights nor the rights of others. Freescale Semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Freescale Semiconductor product could create a situation where personal injury or death may occur. Should Buyer purchase or use Freescale Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold Freescale Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Freescale Semiconductor was negligent regarding the design or manufacture of the part. Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. (c) Freescale Semiconductor, Inc. 2006. All rights reserved.
MRF284LR1 MRF284LSR1
Rev. 12 17, 5/2006 Document Number: MRF284
RF Device Data Freescale Semiconductor

▲Up To Search▲

Price & Availability of MRF284

	To Download MRF284 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .