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| MOSFET INCHANGE IRF830 N-channel mosfet transistor Features With TO-220 package Simple drive requirements Fast switching VDSS=500V; RDS(ON)U 1.5| ;ID=4.5A 1.gate 2.drain 3.source 123 Absolute Maximum Ratings Tc=25ae SYMBOL VDSS VGS ID PARAMETER Drain-source voltage (VGS=0) Gate-source voltage Drain Current-continuous@ TC=25ae Total Dissipation@TC=25ae A RATING 500 20 4.5 UNIT V V A Ptot Tj Tstg SYMBOL V(BR)DSS VGS(TH) RDS(ON) IGSS IDSS VSD TOR NDU TO-220 ICO E SEM Electrical Characteristics Tc=25ae ANG INCH 100 W Max. Operating Junction temperature Storage temperature 150 ae ae -65~150 PARAMETER CONDITIONS MIN MAX UNIT Drain-source breakdown voltage VGS=0; ID=0.25mA 500 2 V Gate threshold voltage Drain-source on-stage resistance Gate source leakage current Zero gate voltage drain current Diode forward voltage VDS= VGS; ID=0.25mA VGS=10V; ID=2.7A VGS=A 20V;VDS=0 4 1.5 A 100 V | nA uA V VDS=500V; VGS=0 IF=4.5A; VGS=0 1.0 1.6 |
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