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FPAB30BH60 Smart Power Module (SPM(R))
May 2007
FPAB30BH60
Smart Power Module(SPM(R)) for Front-End Rectifier
General Description
FPAB30BH60 is an advanced smart power module(SPM ) of PFC(Power Factor Correction) that Fairchild has newly developed and designed mainly targeting mid-power application especially for an air conditioners. It combines optimized circuit protection and drive IC matched to high frequency switching IGBTs. System reliability is futher enhanced by the integrated under-voltage lock-out and over-current protection function.
(R)
Features
* Low thermal resistance due to Al2O3-DBC substrate * 600V-30A 1-phase IGBT PWM semi-converter including a drive IC for gate driving and protection * Typical switching frequency of 20kHz * Isolation rating of 2500Vrms/min.
Applications
* AC 85V ~ 264V single-phase front-end rectifier
Top View
44mm
Bottom View
26.8mm
Fig. 1.
(c)2007 Fairchild Semiconductor Corporation
FPAB30BH60 Smart Power Module (SPM(R))
Integrated Power Functions
* PFC converter for single-phase AC/DC power conversion (Please refer to Fig. 3)
Integrated Drive, Protection and System Control Functions
* For IGBTs: Gate drive circuit, Overcurrent circuit protection (OC), Control supply circuit under-voltage (UV) protection * Fault signaling: Corresponding to a UV fault * Input interface: 5V CMOS/LSTTL compatible, Schmitt trigger input
Pin Configuration
Top View
V CC COM COM COM IN VFO CFOD CSC R TH V TH VG VG N N N N NR NR NR NR
P P N.C.
L
PR
R
S
Fig. 2.
(c)2007 Fairchild Semiconductor Corporation
FPAB30BH60 Smart Power Module (SPM(R))
Pin Descriptions
Pin Number 1 2,3,4 5 6 7 8 9 10 11,12 13~16 17~20 21,22 23 24 25 26 27 Pin Name VCC COM IN(R) VFO CFOD CSC R(TH) V(TH) Vg N NR P N.C L PR R S Pin Description Common Bias Voltage for IC and IGBTs Driving Common Supply Ground Signal Input for Low-side R-phase IGBT Fault Output Capacitor for Fault Output Duration Time Selection Capacitor (Low-pass Filter) for Over Current Detection NTC Thermistor terminal NTC Thermistor terminal IGBT gate dummy IGBT emitter Negative DC-Link of Rectifier Positive Rail of DC-Link No Connection Reactor connection pin Positive DC-Link of Rectifier AC input for R-phase AC input for S-phase
Internal Equivalent Circuit and Input/Output Pins
VTH RTH VG CSC
NTC Thermistor
P
CSC
CFOD VFO L
CFOD VFO IN(S) COM VCC OUT
PR
IN COM VCC N NR
R S
Fig. 3.
Package Marking & Ordering Information
Device Marking
FPAB30BH60
Device
FPAB30BH60
Package
SPM27-IA
Reel Size
-
Tape Width
-
Quantity
10
(c)2007 Fairchild Semiconductor Corporation
FPAB30BH60 Smart Power Module (SPM(R))
Absolute Maximum Ratings (TJ = 25C,
Converter Part
Item Symbol Vi
Unless Otherwise Specified)
Supply Voltage Supply Voltage (Surge) Output Voltage Output Voltage (Surge) Collector-emitter Voltage Input Current (100% Load) Input Current (125% Load) Collector Dissipation Operating Junction Temperature
Condition Applied between R-S
Rating 264
Unit VRMS
Vi(Surge) VPN VPN(Surge) VCES Ii Ii(125%) PC TJ
Applied between R-S Applied between P- N Applied between P- N TC < 95C, Vi=220V, VPN= 390V, VPWM=20kHz TC < 95C, Vi=220V, VPN= 390V, VPWM=20kHz, 1min Non-repetitive TC = 25C per One IGBT (Note 1)
500 450 500 600 25 30 169 -20 ~ 150
V V V V A A W C
Note 1. The maximum junction temperature rating of the power chips integrated within the SPM(R) is 150 C(@TC 100C). However, to insure safe operation of the SPM(R), the average junction temperature should be limited to TJ(ave) 125C (@TC 100C)
Control Part
Item Control Supply Voltage Symbol Condition VCC Applied between VCC - COM Rating 20 Unit V
Input Signal Voltage Fault Output Supply Voltage Fault Output Current Current Sensing Input Voltage
VIN VFO IFO VSC
Applied between IN - COM Applied between VFO - COM Sink Current at VFO Pin Applied between CSC - COM
-0.3~5.5 -0.3~VCC+0.3 5 -0.3~VCC+0.3
V V mA V
Total System
Item Module Case Operation Temperature Symbol TC Condition Rating -20 ~ 100 Unit C
Storage Temperature Isolation Voltage
TSTG VISO 60Hz, Sinusoidal, AC 1 minute, Connection Pins to DBC
-40 ~ 125 2500
C Vrms
Thermal Resistance
Item Junction to Case Thermal Resistance (Referenced to PKG center) Symbol R(j-c)Q Condition
IGBT FRD Rectifier
Min. Typ. -
Max. 0.74
Unit C/W
R(j-c)F R(j-c)R
-
-
1.44 2.07
C/W C/W
Note : 2. For the measurement point of case temperature(TC), please refer to Fig. 2.
(c)2007 Fairchild Semiconductor Corporation
FPAB30BH60 Smart Power Module (SPM(R))
Electrical Characteristics (TJ = 25C, Unless Otherwise Specified)
Converter Part
Item IGBT saturation voltage Symbol VCE(sat) Condition VCC =15V, VIN = 5V; IC =30A Min. Typ. 2.0 Max. 2.8 Unit V
FRD forward voltage Rectifier forward voltage Switching Times
VFF VFR tON tC(ON) tOFF tC(OFF) trr Irr
IF = 30A IF = 30A VPN = 400V, VCC = 15V, IC =30A VIN = 0V 5V, Inductive Load (Note 3)
-
1.8 1.2 650 400 620 200 60 3.5 -
2.5 1.5 250
V V ns ns ns ns ns A
A
Collector - emitter Leakage Current
ICES
VCE = VCES
-
Note 3. tON and tOFF include the propagation delay time of the internal drive IC. tC(ON) and tC(OFF) are the switching time of IGBT itself under the given gate driving condition internally. For the detailed information, please see Fig. 4
Control Part
Item Symbol Condition Quiescent VCC Supply Cur- IQCCL VCC = 15V, IN = 0V VCC - COM rent Min. Typ. Max. 26 Unit mA
Fault Output Voltage Over Current Trip Level Supply Circuit UnderVoltage Protection Fault-out Pulse Width ON Threshold Voltage OFF Threshold Voltage Resistance of Thermistor
VFOH VFOL VSC(ref) UVCCD UVCCR tFOD VIN(ON) VIN(OFF) RTH
VSC = 0V, VFO Circuit: 4.7k to 5V Pull-up VSC = 1V, VFO Circuit: 4.7k to 5V Pull-up VCC = 15V Detection Level Reset Level CFOD = 33nF (Note 4) Applied between IN - COM @ TC = 25C (Note Fig. 9) @ TC = 100C (Note Fig. 9)
4.5 0.45 10.7 11.2 1.4 3.0 -
0.5 11.9 12.4 1.8 50 2.99
0.8 0.55 13.0 13.2 2.0 0.8 -
V V V V V ms V V k k
Note 4. The fault-out pulse width tFOD depends on the capacitance value of CFOD according to the following approximate equation : CFOD = 18.3 x 10-6 x tFOD[F]
(c)2007 Fairchild Semiconductor Corporation
FPAB30BH60 Smart Power Module (SPM(R))
Electrical Characteristics
Irr
100% of IC 120% of IC
VCE
90% of IC 15% of VCE
IC
10% of IC
IC VIN
10% of IC
VCE 15% of VCE VIN
tON
trr tC(ON) tOFF
tC(OFF)
(a) Turn-on
(b) Turn-off
Fig. 4. Switching Time Definition
Mechanical Characteristics and Ratings
Item Condition Limits Min. 0.51 Typ. 0.62 Max. 0.72 Units
Mounting Torque Device Flatness Weight
Mounting Screw: - M3 Note Fig. 5
Recommended 0.62N*m
N*m
m
0 -
15.00
+120 -
g
(+)
(+) (+)
Fig. 5. Flatness Measurement Position
(c)2007 Fairchild Semiconductor Corporation
FPAB30BH60 Smart Power Module (SPM(R))
Time Charts of SPMs Protective Function
In p u t S ig n a l In te rn a l IG B T G a te -E m itte r V o lta g e
P3 UV re s e t
C o n tro l S u p p ly V o lta g e
P5 UV d e te c t P1 P2
P6
O u tp u t C u rr e n t
F a u lt O u tp u t S ig n a l
P4
P1 : Normal operation - IGBT ON and conducting current P2 : Under voltage detection P3 : IGBT gate interrupt P4 : Fault signal generation P5 : Under voltage reset P6 : Normal operation - IGBT ON and conducting current
Fig. 6. Under-Voltage Protection
P5 In p u t S ig n a l P6 In te r n a l IG B T G a t e - E m itt e r V o lt a g e
O C D e te c t io n
P1 P4 O u tp u t C u r r e n t P7
P2 S e n s in g V o lta g e
R C F ilt e r D e la y O C R e fe re n c e V o lt a g e ( 0 . 5 V )
F a u lt O u t p u t S ig n a l
P3
P8
P1 : Normal operation - IGBT ON and conducting current P2 : Over current detection P3 : IGBT gate interrupt / Fault signal generation P4 : IGBT is slowly turned off P5 : IGBT OFF signal P6 : IGBT ON signal - but IGBT cannot be turned on during the fault Output activation P7 : IGBT OFF state P8 : Fault Output reset and normal operation start
Fig. 7. Over Current Protection
(c)2007 Fairchild Semiconductor Corporation
FPAB30BH60 Smart Power Module (SPM(R))
+5V
VG VT H RT H
NTC Thermistor
P
+5V
CSC CF OD
L
CSC CFOD VFO IN OUT
R S PR
Controller
VFO IN
Vac
COM
+15V
VCC
COM VCC
N NR
Fig. 8. Application Example
R-T Graph 120 100 Resistance [k] 80 60 40 20 0 20 30 40 50 60 70 80 90 100 110 120 130 Temperature [C]
Fig. 9. R-T Curve of the Built-in Thermistor
(c)2007 Fairchild Semiconductor Corporation
FPAB30BH60 Smart Power Module (SPM(R))
Detailed Package Outline Drawings
(c)2007 Fairchild Semiconductor Corporation
FPAB30BH60 Smart Power Module (SPM(R))
Detailed Package Outline Drawings
(c)2007 Fairchild Semiconductor Corporation
FPAB30BH60 Smart Power Module (SPM(R))
Detailed Package Outline Drawings
(c)2007 Fairchild Semiconductor Corporation
TRADEMARKS The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx Build it NowTM CorePLUSTM CROSSVOLTTM CTLTM Current Transfer LogicTM (R) EcoSPARK FACT Quiet SeriesTM (R) FACT (R) FAST FastvCoreTM FPSTM (R) FRFET SM Global Power Resource Green FPSTM
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Green FPSTM e-SeriesTM GTOTM i-LoTM IntelliMAXTM ISOPLANARTM MegaBuckTM MICROCOUPLERTM MicroFETTM MicroPakTM Motion-SPMTM (R) OPTOLOGIC (R) OPTOPLANAR PDP-SPMTM (R) Power220 (R) Power247
POWEREDGE Power-SPMTM (R) PowerTrench Programmable Active DroopTM (R) QFET QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM SMART STARTTM (R) SPM STEALTHTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6
(R)
SuperSOTTM-8 SyncFETTM (R) The Power Franchise
TM
TinyBoostTM TinyBuckTM (R) TinyLogic TINYOPTOTM TinyPowerTM TinyPWMTM TinyWireTM SerDesTM (R) UHC UniFETTM VCXTM
DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Preliminary Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor. The datasheet is printed for reference information only.
Rev. I29
No Identification Needed
Full Production
Obsolete
Not In Production
(c) 2007 Fairchild Semiconductor Corporation
www.fairchildsemi.com

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