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 MITSUBISHI HVIGBT MODULES
CM800HB-66H
HIGH POWER SWITCHING USE 2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules INSULATED TYPE
CM800HB-66H
q IC...................................................................800A q VCES ....................................................... 3300V q Insulated Type q 1-element in a pack
APPLICATION Inverters, Converters, DC choppers, Induction heating, DC to DC converters.
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
130 114 570.25 570.25 4 - M8 NUTS
C
20
C
C
C
C
124 0.25
G E E E
CM C
E
E
E
G
140
40
CIRCUIT DIAGRAM
3 - M4 NUTS
10.35 10.65 48.8
6 - 7MOUNTING HOLES
61.5 18 5.2
15 40
38
LABEL
HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules)
29.5
28
5
Mar. 2003
MITSUBISHI HVIGBT MODULES
CM800HB-66H
2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE
MAXIMUM RATINGS (Tj = 25C)
Symbol VCES VGES IC ICM IE (Note 2) IEM(Note 2) PC (Note 3) Tj Tstg Viso -- -- Item Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Mounting torque Mass VGE = 0V VCE = 0V DC, TC = 100C Pulse Pulse TC = 25C, IGBT part Conditions Ratings 3300 20 800 1600 800 1600 10400 -40 ~ +150 -40 ~ +125 6000 6.67 ~ 13.00 2.84 ~ 6.00 0.88 ~ 2.00 1.5 Unit V V A A A A W C C V N*m N*m N*m kg
(Note 1) (Note 1)
-- -- Charged part to base plate, rms, sinusoidal, AC 60Hz 1min. Main terminals screw M8 Mounting screw M6 Auxiliary terminals screw M4 Typical value
ELECTRICAL CHARACTERISTICS (Tj = 25C)
Symbol ICES Item Conditions VCE = VCES, VGE = 0V IC = 80mA, VCE = 10V VGE = VGES, VCE = 0V Tj = 25C IC = 800A, VGE = 15V Tj = 125C VCE = 10V VGE = 0V VCC = 1650V, IC = 800A, VGE = 15V VCC = 1650V, IC = 800A VGE1 = VGE2 = 15V RG = 2.5 Resistive load switching operation IE = 800A, VGE = 0V IE = 800A, die / dt = -1600A / s Junction to case, IGBT part Junction to case, FWDi part Case to fin, conductive grease applied Min -- 4.5 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- Limits Typ -- 6.0 -- 3.80 4.00 120 12.0 3.6 5.7 -- -- -- -- 2.80 -- 270 -- -- 0.008 Max 10 7.5 0.5 4.94 -- -- -- -- -- 1.60 2.00 2.50 1.00 3.64 1.40 -- 0.012 0.024 -- Unit mA V A V nF nF nF C s s s s V s C K/W K/W K/W
Collector cutoff current Gate-emitter VGE(th) threshold voltage Gate-leakage current IGES Collector-emitter VCE(sat) saturation voltage Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres Total gate charge QG td (on) Turn-on delay time tr Turn-on rise time td (off) Turn-off delay time tf Turn-off fall time VEC(Note 2) Emitter-collector voltage trr (Note 2) Reverse recovery time Qrr (Note 2) Reverse recovery charge Rth(j-c)Q Thermal resistance Rth(j-c)R Rth(c-f) Contact thermal resistance
Note 1. 2. 3. 4.
(Note 4)
(Note 1)
Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating. IE, VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode. Junction temperature (Tj) should not increase beyond 150C. Pulse width and repetition rate should be such as to cause negligible temperature rise.
HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules)
Mar. 2003
MITSUBISHI HVIGBT MODULES
CM800HB-66H
2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE
PERFORMANCE CURVES
OUTPUT CHARACTERISTICS (TYPICAL) 1600 Tj=25C
COLLECTOR CURRENT IC (A)
TRANSFER CHARACTERISTICS (TYPICAL) 1600
COLLECTOR CURRENT IC (A)
VGE=14V 1200 VGE=15V VGE=20V 800
VGE=13V VGE=12V VGE=11V VGE=10V
VCE=10V
1200
800
VGE=9V 400 VGE=8V VGE=7V 0 0 2 4 6 8 10
400 Tj = 25C Tj = 125C 0 0 4 8 12 16 20
COLLECTOR-EMITTER VOLTAGE VCE (V)
GATE-EMITTER VOLTAGE VGE (V)
COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL)
COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V)
COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL)
COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V)
8
VGE=15V
10 Tj = 25C 8 IC = 1600A 6 IC = 800A
6
4
4
2 Tj = 25C Tj = 125C 0 0 400 800 1200 1600
2
IC = 320A 0 4 8 12 16 20
0
COLLECTOR CURRENT IC (A)
GATE-EMITTER VOLTAGE VGE (V)
EMITTER-COLLECTOR VOLTAGE VEC (V)
FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 8
CAPACITANCE Cies, Coes, Cres (nF)
CAPACITANCE CHARACTERISTICS (TYPICAL) 103 7 5 3 2 102 7 5 3 2 101 7 5 3 2 100 VGE = 0V, Tj = 25C Cies, Coes : f = 100kHz : f = 1MHz Cres Cies
6
4
Coes
2 Tj = 25C Tj = 125C 0 0 400 800 1200 1600
Cres
10-1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 COLLECTOR-EMITTER VOLTAGE VCE (V)
Mar. 2003
EMITTER CURRENT IE (A)
MITSUBISHI HVIGBT MODULES
CM800HB-66H
2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE
SWITCHING TIMES (s)
3 2 100 7 5 3 2 10-1 7 5
td(off) td(on) tr tf VCC = 1650V, VGE = 15V RG = 2.5, Tj = 125C Inductive load 5 7 102 23 5 7 103 23 5
101 7 5 3 2 100 7 5
Irr
103 7 5 3 2
trr 5 7 102 23 5 7 103 23 5
102 7 5
COLLECTOR CURRENT IC (A)
EMITTER CURRENT IE (A)
SWITCHING ENERGY (J/P)
2.0 Eon 1.5 Eoff 1.0 0.5 0 Erec
SWITCHING ENERGY (J/P)
HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL) 3.0 VCC = 1650V, VGE = 15V, RG = 2.5, Tj = 125C, 2.5 Inductive load
HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL) 10 VCC = 1650V, IC = 800A, VGE = 15V, Tj = 125C, 8 Inductive load
6 Eon
4
2
Eoff
0
400
800 CURRENT (A)
1200
1600
0
0
10
20
30
GATE RESISTANCE ()
GATE CHARGE CHARACTERISTICS (TYPICAL) 20
GATE-EMITTER VOLTAGE VGE (V) NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth(j - c)
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 101 7 5 3 2 100 7 5 3 2 10-1 7 5 3 2 10-2 10-3 2 3 5 7 10-2 2 3 5 7 10-1 2 3 5 7 100 TIME (s)
Mar. 2003
VCC = 1650V IC = 800A 16
Single Pulse TC = 25C Rth(j - c)Q = 0.012K/W Rth(j - c)R = 0.024K/W
12
8
4
0
0
2000
4000
6000
8000
10000
GATE CHARGE QG (nC)
REVERSE RECOVERY CURRENT Irr (A)
HALF-BRIDGE SWITCHING TIME CHARACTERISTICS (TYPICAL) 5
REVERSE RECOVERY TIME trr (s)
REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 5 5 VCC = 1650V, Tj = 125C 3 3 Inductive load 2 2 VGE = 15V, RG = 2.5


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