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2SK3134(L), 2SK3134(S)
Silicon N Channel MOS FET High Speed Power Switching
REJ03G1066-0400 (Previous: ADE-208-721B) Rev.4.00 Sep 07, 2005
Features
* Low on-resistance RDS(on) = 4 m typ. * Low drive current * 4 V gate drive device can be driven from 5 V source
Outline
RENESAS Package code: PRSS0004AE-A (Package name: LDPAK(L))
4
RENESAS Package code: PRSS0004AE-B (Package name: LDPAK(S)-(1))
4
D
1 1
G
2
3
1. Gate 2. Drain 3. Source 4. Drain
2
3
S
Rev.4.00 Sep 07, 2005 page 1 of 8
2SK3134(L), 2SK3134(S)
Absolute Maximum Ratings
(Ta = 25C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW 10 s, duty cycle 1 % 2. Value at Tc = 25C 3. Value at Tch = 25C, Rg 50 Symbol VDSS VGSS ID ID(pulse) Note 1 IDR IAP Note 3 EAR Note 3 Pch Note 2 Tch Tstg Ratings 30 20 75 300 75 35 122 100 150 -55 to +150 Unit V V A A A A mJ W
C C
Electrical Characteristics
(Ta = 25C)
Item Drain to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Note: 4. Pulse test Symbol V(BR)DSS IGSS IDSS VGS(off) RDS(on) |yfs| Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf VDF trr Min 30 -- -- 1.0 -- -- 50 -- -- -- -- -- -- -- -- -- -- -- -- Typ -- -- -- -- 4.0 5.5 80 6800 1550 500 130 16 30 50 370 550 380 1.05 80 Max -- 0.1 10 2.5 5.0 8.5 -- -- -- -- -- -- -- -- -- -- -- -- -- Unit V A A V m m S pF pF pF nc nc nc ns ns ns ns V ns Test Conditions ID = 10 mA, VGS = 0 VGS = 20 V, VDS = 0 VDS = 30 V, VGS = 0 ID = 1 mA, VDS = 10 V Note 4 ID = 40 A, VGS = 10 V Note 4 ID = 40 A, VGS = 4 V Note 4 ID = 40 A, VDS = 10 V Note 4 VDS = 10 V, VGS = 0, f = 1 MHz VDD = 10 V, VGS = 10 V, ID = 75 A VGS = 10 V, ID = 40 A, RL = 0.25
IF = 75 A, VGS = 0 IF = 75 A, VGS = 0 diF/ dt = 50 A/s
Rev.4.00 Sep 07, 2005 page 2 of 8
2SK3134(L), 2SK3134(S)
Main Characteristics
Power vs. Temperature Derating
160 1000 300
Maximum Safe Operation Area
10
PW s 1 = m DC 10 s m Op s( e 1 s (T rati c = on hot ) 25 Operation in C )
Channel Dissipation Pch (W)
Drain Current ID (A)
120
100 30 10
10
s
0
80
40
3 this area is limited by RDS(on) 1 0.3
0
50
100
150
200
0.1 Ta = 25C 0.1 0.3 1
3
10
30
100
Case Temperature TC (C)
Drain to Source Voltage VDS (V)
Typical Output Characteristics
100
VGS = 10 V
Typical Transfer Characteristics
100
Pulse Test
Drain Current ID (A)
4V 60 3V
Drain Current ID (A)
80
5V 80
VDS = 10 V Pulse Test
60
40
40 25C 20 75C 1 2 Tc = -25C 3 4 5
20
2.5 V
0
2
4
6
8
10
0
Drain to Source Voltage VDS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage
Gate to Source Voltage VGS (V) Static Drain to Source on State Resistance vs. Drain Current
100
Drain to Source Saturation Voltage VDS (on) (V)
0.5
Pulse Test
Static Drain to Source on State Resistance RDS (on) (m)
Pulse Test
30 10 3 1 0.3 0.1 1 VGS = 4 V
0.4
0.3 ID = 50 A
10 V
0.2
0.1 10 A 0 4 8 12
20 A
16
20
3
10
30
100
300 1000
Gate to Source Voltage VGS (V)
Drain Current ID (A)
Rev.4.00 Sep 07, 2005 page 3 of 8
2SK3134(L), 2SK3134(S)
Static Drain to Source on State Resistance vs. Temperature
Forward Transfer Admittance yfs (S)
20 Pulse Test 16 500 200 100 50 20 10 5 2 1 0.5 0.1 0.3 1 3 10 30 100 25C 75C Tc = -25C
VDS = 10 V Pulse Test
Static Drain to Source on State Resistance RDS (on) (m)
Forward Transfer Admittance vs. Drain Current
12
ID = 50 A 10, 20 A 10, 20, 50 A
8 4V 4 0 -50 VGS = 10 V 0 50 100
150
200
Case Temperature TC (C) Body to Drain Diode Reverse Recovery Time
1000 30000 di / dt = 50 A / s VGS = 0, Ta = 25C
Drain Current ID (A) Typical Capacitance vs. Drain to Source Voltage
VGS = 0 f = 1 MHz
Reverse Recovery Time trr (ns)
500 200 100 50 20 10 0.1
Capacitance C (pF)
10000
Ciss
3000 Coss 1000 Crss 300 100 0
0.3
1
3
10
30
100
10
20
30
40
50
Reverse Drain Current IDR (A)
Drain to Source Voltage VDS (V)
Dynamic Input Characteristics
Drain to Source Voltage VDS (V)
ID = 75 A
Switching Characteristics
Gate to Source Voltage VGS (V)
20 1000 500
td(off) tf
50
VGS
40
VDD = 20 V 10 V 5V
16
Switching Time t (ns)
200 100 50 20
tr td(on)
30
VDS
12
20
8
10
VDD = 20 V 10 V 5V
4 0 400
0
80
160
240
320
10 0.1 0.2 0.5 1
VGS = 10 V, VDD = 10 V PW = 5 s, duty < 1 %
2
5 10 20
50 100
Gate Charge Qg (nc)
Drain Current ID (A)
Rev.4.00 Sep 07, 2005 page 4 of 8
2SK3134(L), 2SK3134(S)
Reverse Drain Current vs. Source to Drain Voltage
Repetitive Avalanche Energy EAR (mJ) (A)
100 10 V 80 5V 200
IAP= 35 A VDD = 15 V duty < 0.1 % Rg > 50
Maximum Avalanche Energy vs. Channel Temperature Derating
Reverse Drain Current IDR
160
60
VGS = 0, -5 V
120
40
80
20 Pulse Test 0 0.4 0.8 1.2 1.6 2.0
40 0 25
50
75
100
125
150
Source to Drain Voltage
VSDF (V)
Channel Temperature Tch (C)
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance s (t)
3 Tc = 25C 1 D=1 0.5 0.3
0.2
0.1
0.1
0.05
ch - c(t) = s (t) * ch - c ch - c = 1.25C/W, Tc = 25C
PDM PW T
0.03
0.02 1 lse 0.0 t pu o h 1s
D=
PW T
0.01 10
100
1m
10 m
100 m
1
10
Pulse Width Avalanche Test Circuit
VDS
PW (S) Avalanche Waveform
EAR=
DSS 1 * L * IAP2 * VDSS - VDD 2
L
IAP
V
Monitor Monitor
V(BR)DSS IAP VDD VDS
Rg Vin 15 V
D. U. T
ID
50 0
VDD
Rev.4.00 Sep 07, 2005 page 5 of 8
2SK3134(L), 2SK3134(S)
Switching Time Test Circuit
Vin Monitor D.U.T. RL Vin Vin 10 V 50 VDD = 10 V Vout 10% 10% 10% Vout Monitor
Switching Time Waveforms
90%
90% td(on) tr
90% td(off) tf
Rev.4.00 Sep 07, 2005 page 6 of 8
2SK3134(L), 2SK3134(S)
Package Dimensions
JEITA Package Code
RENESAS Code
PRSS0004AE-A
Package Name LDPAK(L) / LDPAK(L)V
MASS[Typ.] 1.40g
Unit: mm
(1.4)
4.44 0.2 10.2 0.3 1.3 0.15
11.3 0.5 0.3 10.0 + 0.5 -
8.6 0.3
1.3 0.2 1.37 0.2
0.76 0.1 2.54 0.5 2.54 0.5
11.0 0.5
0.2 0.86 + 0.1 -
2.49 0.2
0.4 0.1
JEITA Package Code SC-83
RENESAS Code PRSS0004AE-B
Package Name LDPAK(S)-(1) / LDPAK(S)-(1)V
MASS[Typ.] 1.30g
Unit: mm
4.44 0.2 10.2 0.3
(1.4)
8.6 0.3
+ 0.3 - 0.5
10.0
(1.5)
(1.5)
2.49 0.2 0.2 0.1 + 0.1 -
7.8 7.0
2.2
1.37 0.2 1.3 0.2 2.54 0.5
0.3 3.0 + 0.5 -
0.2 0.86 + 0.1 -
0.4 0.1
2.54 0.5
Rev.4.00 Sep 07, 2005 page 7 of 8
1.7
1.3 0.15
7.8 6.6
2SK3134(L), 2SK3134(S)
Ordering Information
Part Name 2SK3134L-E 2SK3134STL-E Quantity 500 pcs 1000 pcs Box (Sack) Taping Shipping Container
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product.
Rev.4.00 Sep 07, 2005 page 8 of 8
Sales Strategic Planning Div.
Keep safety first in your circuit designs!
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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Colophon .3.0

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