 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| SMD Type NPN Silicon Epitaxial Transistor 2SD1615A Transistors Features World Standard Miniature Package. Low VCE(sat) VCE(sat) = 0.15 V Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector Current (pulse) *1 Total power dissipation at 25 Junction temperature Storage temperature *1 Pulse Test PW 10ms, Duty Cycle 50%. Ambient Temperature*2 Symbol VCBO VCEO VEBO IC IC PT Tj Tstg Rating 120 60 6 1 2 2.0 150 -55 to +150 Unit V V V A A W *2 When mounted on ceramic substrate of 16 cm2X 0.7 mm Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current DC current gain * Collector saturation voltage * Base saturation voltage * Base-emitter voltage * Gain bandwidth product Output capacitance * Pulsed: PW 350 is, duty cycle 2% Symbol ICBO IEBO hFE Testconditons VCB = 120 V, IE = 0 A VEB = 6.0 V, IC = 0 A VCE = 2.0 V, IC = 100 mA 135 0.15 0.9 600 80 160 19 Min Typ Max 100 100 400 0.3 1.2 700 V V mV MHz pF Unit nA nA VCE(sat) IC = 1 A, IB = 50 mA VBE(sat) IC = 1 A, IB = 50 mA VBE fT Cob VCE = 2.0 V, IC = 50 mA VCE = 2.0 V, IE = -100 mA VCB = 10 V, IE = 0, f = 1.0 MHz hFE Classification Marking hFE GQ 135 270 GP 200 400 www.kexin.com.cn 1 |
Price & Availability of 2SD1615A
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |