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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD1410 DESCRIPTION *Collector-Emitter Sustaining Voltage: VCEO(SUS)= 250V(Min) *Collector-Emitter Saturation Voltage:V CE(sat)= 2.0V(Max) @IC= 4A *High DC Current Gain : hFE= 2000(Min) @ IC= 2A, VCE= 2V APPLICATIONS *Igniter applications *High voltage switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VCBO VCEO VEBO IC IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Base Current-Continuous Collector Power Dissipation @ Ta=25 VALUE 300 250 5 6 1 2.0 UNIT V V V A A PC Collector Power Dissipation @ TC=25 TJ Tstg Junction Temperature Storage Temperature Range 30 150 -55~150 W isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SD1410 TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.5A ; L= 40mH 250 V VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 40mA B 2.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 4A; IB= 40mA B 2.5 V A ICBO Collector Cutoff Current VCB= 300V; IE= 0 500 IEBO Emitter Cutoff Current VEB= 5V; IC=0 500 A hFE -1 DC Current Gain IC= 2A ; VCE= 2V 2000 hFE -2 DC Current Gain IC= 4A ; VCE= 2V 200 COB Output Capacitance IE= 0 ; VCB= 10V; ftest=1MHz 35 pF Switching times s ton Turn-on Time IC= 4A , IB1= -IB2= 40mA RL= 25; VCC= 100V 1.0 tstg Storage Time 8.0 s tf Fall Time 5.0 s isc Websitewww.iscsemi.cn 2 INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD1410 isc Websitewww.iscsemi.cn |
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