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 Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1275 2SD1275A
DESCRIPTION With TO-220Fa package Complement to type 2SB949/949A High DC current gain High-speed switching APPLICATIONS For power amplification
PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter Fig.1 simplified outline (TO-220Fa) and symbol
Absolute maximum ratings (Ta=25ae )
SYMBOL

PARAMETER
VCBO
VCEO
INC
Collector-base voltage
E SEM ANG H
2SD1275 2SD1275A 2SD1275 Open base 2SD1275A
OND IC
CONDITIONS
TOR UC
VALUE 60 80 60
UNIT
Open emitter
V
Collector-emitter voltage
V 80
VEBO IC ICM
Emitter-base voltage Collector current Collector current-Peak
Open collector
5 2 4
V A A
TC=25ae PC Collector power dissipation Ta=25ae Tj Tstg Junction temperature Storage temperature
35 W 2 150 -55~150 ae ae
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25ae unless otherwise specified PARAMETER 2SD1275 IC=30mA , IB=0 2SD1275A VCEsat VBE Collector-emitter saturation voltage Base-emitter voltage 2SD1275 2SD1275A Collector ICEO cut-off current IEBO hFE-1 hFE-2 fT Emitter cut-off current 2SD1275A VCE=40V; IB=0 VEB=5V; IC=0 2SD1275 IC=2A; IB=8mA VCE=4V; IC=2A VCB=60V; IE=0 CONDITIONS
2SD1275 2SD1275A
SYMBOL
MIN 60
TYP.
MAX
UNIT
V(BR)CEO
Collector-emitter breakdown voltage
V 80 2.5 2.8 V V
ICBO
Collector cut-off current
1.0 VCB=80V; IE=0 VCE=30V; IB=0 2.0
mA
mA
IN
DC current gain DC current gain

Transition frequency
Switching times ton ts tf
ANG CH
MIC E SE
IC=2A ; VCE=4V IC=2A ;IB1=8mA IB2=-8mA;VCC=50V
IC=1A ; VCE=4V
DUC ON
1000 2000
TOR
2.0 10000
mA
IC=0.5A; VCE=10V;f=1MHz
20
MHz
Turn-on time Storage time Fall time
0.5 4.0 1.0 |I |I
|I
s s s
hFE-2 Classifications Q 2000-5000 R 4000-10000
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1275 2SD1275A
PACKAGE OUTLINE

CHA IN
E SEM NG
OND IC
TOR UC
Fig.2 Outline dimensions (unindicated tolerance:A
0.15 mm)
3


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