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Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1274 2SD1274A 2SD1274B DESCRIPTION With TO-220Fa package High VCBO High speed switching APPLICATIONS Power amplifier applicaitons PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter Fig.1 simplified outline (TO-220Fa) and symbol Absolute maximum ratings (Ta=25ae ) SYMBOL PARAMETER VCBO VCEO VEBO IC CHA IN Collector-base voltage ES NG 2SD1274 2SD1274A 2SD1274B MIC E Open emitter Open base Open collector CONDITIONS OND TOR UC VALUE 150 200 250 80 6 5 UNIT V Collector-emitter voltage V V A Emitter-base voltage Collector current (DC) TC=25ae PC Collector power dissipation Ta=25ae Tj Tstg Junction temperature Storage temperature 40 W 2 150 -55~150 ae ae Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter sustaining voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter voltage 2SD1274 ICBO Collector cut-off current 2SD1274A 2SD1274B IEBO hFE fT tf Emitter cut-off current 2SD1274 2SD1274A 2SD1274B SYMBOL VCEO(SUS) V(BR)EBO VCEsat VBE CONDITIONS IC=0.2A, L=25mH IE=1mA, IC=0 IC=5A; IB=1A IC=5A ; VCE=4V VCB=150V; IE=0 VCB=200V; IE=0 VCB=250V; IE=0 VEB=5V; IC=0 IC=5A ; VCE=4V MIN 80 6 TYP. MAX UNIT V V 1.6 1.5 V V 1 mA IN Fall time DC current gain Transition frequency ANG CH MIC E SE IC=0.5A ; VCE=10V DUC ON 14 40 TOR 50 |I 1.0 A MHz |I s IC=5A ;IB1=0.8A VEB=-5V 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1274 2SD1274A 2SD1274B CHA IN E SEM NG OND IC TOR UC Fig.2 Outline dimensions (unindicated tolerance:A 0.15 mm) 3 |
Price & Availability of 2SD1274
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