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| Datasheet File OCR Text: |
| INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor 2SC3110 DESCRIPTION *Low Noise *High Gain *High Current-Gain Bandwidth Product APPLICATIONS *Designed for use in RF wide band low noise amplifier. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 15 V VCEO Collector-Emitter Voltage 12 V VEBO Emitter-Base Voltage 2.5 V IC Collector Current-Continuous 30 mA ICP Collector Current-Peak 50 mA PC Collector Power Dissipation @TC=25 0.2 W TJ Junction Temperature 150 Tstg Storage Temperature Range -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC3110 TYP. MAX UNIT ICBO Collector Cutoff Current VCB= 10V; IE= 0 0.1 A IEBO Emitter Cutoff Current VEB= 2V; IC= 0 1 A hFE DC Current Gain IC= 10mA ; VCE= 10V 40 fT Current-Gain--Bandwidth Product IE= -10mA ; VCE= 10V 4.5 GHz COB Output Capacitance IE= 0; VCB= 10V; f= 1.0MHz 1.2 pF S21e2 Insertion Power Gain IC= 20mA; VCE= 10V; f= 0.8GHz 9 12 dB GUM Power Gain 12 14 dB NF Noise Figure IC= 5mA; VCE= 10V; f= 0.8GHz 1.3 2.5 dB isc Websitewww.iscsemi.cn 2 |
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