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| Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB600 DESCRIPTION With TO-3 package High power dissipations Complement to type 2SD555 APPLICATIONS For use in audio and power amplifier applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=ae ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Open base HAN INC Collector-emitter voltage Emitter-base voltage Collector current Collector-base voltage SEM GE CONDITIONS Open emitter OND IC TOR UC VALUE -200 -200 -5 -10 UNIT V V V A W ae ae Open collector Collector power dissipation Junction temperature Storage temperature TC=25ae 200 150 -55~200 Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER CONDITIONS MIN TYP. 2SB600 SYMBOL MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-25mA ;IB=0 -200 V V(BR)EBO Emitter-base breakdown voltage IE=-1mA ;IC=0 -5 V VCEsat Collector-emitter saturation voltage IC=-10A; IB=-1A -1.5 V VBEsat Base-emitter saturation voltage IC=-10A; IB=-1A -2.0 V ICBO Collector cut-off current VCB=-200V; IE=0 -0.1 mA IEBO Emitter cut-off current VEB=-5V; IC=0 -0.1 mA hFE fT DC current gain IC=-2A ; VCE=-5V 20 Transition frequency HAN INC SEM GE IC=-0.5A ; VCE=-10V OND IC 4 TOR UC MHz 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB600 SEM GE HAN INC OND IC TOR UC Fig.2 outline dimensions (unindicated tolerance:A 0.1mm) 3 |
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