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| Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB596 DESCRIPTION With TO-220C package Complement to type 2SD526 Good linearity of hFE APPLICATIONS Power amplifier applications Recommend for 20 25W high fidelity audio frequency amplifier output stage PINNING PIN 1 2 3 Emitter Collector;connected to mounting base Base DESCRIPTION Absolute maximum ratings(Tc=25ae ) SYMBOL VCBO VCEO VEBO IC IE IB PC Tj Tstg PARAMETER HAN INC Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Emitter current Base current SEM GE Open base CONDITIONS Open emitter OND IC TOR UC VALUE -80 -80 -5 -4 -4 -3 UNIT V V V A A A W ae ae Open collector Collector power dissipation Junction temperature Storage temperature TC=25ae 30 150 -55~150 Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Emitter-base breakdown votage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=-50mA; IB=0 IE=-10mA; IC=0 IC=-3 A;IB=-0.3 A IC=-3A ; VCE=-5V VCB=-80V; IE=0 VEB=-5V; IC=0 IC=-0.5A ; VCE=-5V IC=-3A ; VCE=-5V IC=-0.5A ; VCE=-5V 40 15 3 MIN -80 -5 TYP. 2SB596 SYMBOL V(BR)CEO V(BR)EBO VCEsat VBE ICBO IEBO hFE-1 hFE-2 fT COB MAX UNIT V V -1.7 -1.5 -30 -100 240 |I |I V V A A Transition frequency O Y Output capacitance hFE-1 classifications R 40-80 HAN INC 70-140 SEM GE IE=0; VCB=-10V;f=1MHz OND IC TOR UC 130 MHz pF 120-240 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB596 SEM GE HAN INC OND IC TOR UC Fig.2 Outline dimensions (unindicated tolerance:A 0.10 mm) 3 Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB596 SEM GE HAN INC OND IC TOR UC 4 |
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