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79L12 2SA1386B 5962F9 1S25N06 HRL1234 TS341010 MUR660 AN7515SH
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  Datasheet File OCR Text:
 Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB1429
DESCRIPTION With TO-3PL package Complement to type 2SD2155 APPLICATIONS Power amplifier applications Recommend for 100W high fidelity audio frequency amplifier output stage
PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Fig.1 simplified outline (TO-3PL) and symbol
Absolute maximum ratings(Ta=25ae )
SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER

Collector-base voltage
IN
Collector-emitter voltage
Emitter-base voltage
ANG CH
EMIC ES
Open emitter Open base Open collector
CONDITIONS
OND
TOR UC
VALUE -180 -180 -5 -15 -1.5
UNIT V V V A A W ae ae
Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25ae
150 150 -55~150
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=-50mA ;IB=0 IC=-8A ;IB=-0.8A IC=-6A ; VCE=-5V VCB=-180V; IE=0 VEB=-5V; IC=0 IC=-1A ; VCE=-5V IC=-6A ; VCE=-5V IC=-1A ; VCE=-5V IE=0;f=1MHz;VCB=-10V 55 30 MIN -180
2SB1429
SYMBOL V(BR)CEO VCEsat VBE ICBO IEBO hFE-1 hFE-2 fT COB
TYP.
MAX
UNIT V
-3.0 -1.5 -5 -5 160 |I |I
V V A A
Collector output capacitance

O 80-160
10
MHz pF
hFE-1 classifications R 55-10
HAN INC
SEM GE
OND IC
TOR UC
340
2
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SB1429
SEM GE
HAN INC
OND IC
TOR UC
Fig.2 Outline dimensions (unindicated tolerance:A
0.50 mm)
3
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB1429
SEM GE
HAN INC
OND IC
TOR UC
4


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