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NPN-Silizium-Fototransistor in SMR(R) Gehause Silicon NPN Phototransistor in SMR(R) Package Lead (Pb) Free Product - RoHS Compliant SFH 3500 Wesentliche Merkmale * Spektraler Bereich der Fotoempfindlichkeit: 450 nm ...1060 nm * Gehause: SMR(R) (Surface Mount Radial), Harz * Besonderheit des Bauteils: hohe Fotoempfindlichkeit * Gehausegleich: IRED SFH 4500, SFH 4515 Anwendungen * Fertigungs- und Kontrollanwendungen der Industrie * Messen/Steuern/Regeln" * Lichtschranken Features * * * * Spectral Range of Sensitivity: 450 nm ...1060 nm Package: SMR(R) (Surface Mount Radial), Epoxy Feature of the device: high photosensitivity * Package Match: IR emitter SFH 4500,SFH 4515 Applications * A variety of manufacturing and monitoring applications * For control and drive circuits * Photointerrupters Typ Type SFH 3500 Bestellnummer Ordering Code Q65110A2636 Fotostrom , Ee= 0.5 mW/cm2, = 950 nm, VCE = 5 V Photocurrent IPCE (mA) 4.0...20.0 2007-04-03 1 SFH 3500 Grenzwerte Maximum Ratings Bezeichnung Parameter Betriebs- und Lagertemperatur Operating and storage temperature range Kollektor-Emitterspannung Collector-emitter voltage Kollektorstrom Collector current Kollektorspitzenstrom, < 10 s Collector surge current Emitter-Kollektorspannung Emitter-collector voltage Verlustleistung, TA = 25 C Total power dissipation Warmewiderstand Thermal resistance Symbol Symbol Wert Value - 40 ... + 85 35 70 50 100 7 150 400 Einheit Unit C V V mA mA V mW K/W Top; Tstg VCE VCE (t < 2 min) IC ICS VEC Ptot RthJA 2007-04-03 2 SFH 3500 Kennwerte (TA = 25 C, = 950 nm) Characteristics Bezeichnung Parameter Wellenlange der max. Fotoempfindlichkeit Wavelength of max. sensitivity Spektraler Bereich der Fotoempfindlichkeit S = 10% von Smax Spectral range of sensitivity S = 10% of Smax Bestrahlungsempfindliche Flache Radiant sensitive area Abmessungen der Chip-Flache Dimension of chip area Halbwinkel Half angle Kapazitat, VCE = 5 V, f = 1 MHz, E = 0 Capacitance Dunkelstrom, VCE = 20 Dark current Symbol Symbol S max 830 450 ... 1060 Wert Value Einheit Unit nm nm A LxB LxW 0.55 1.00 x 1.00 13 10 3 (< 200) mm2 mm x mm Grad deg. pF nA CCE ICEO 2007-04-03 3 OPTO SEMICONDUCTORS SFH 3500 Die Fototransistoren werden nach ihrer Fotoempfindlichkeit gruppiert und mit arabischen Ziffern gekennzeichnet. The phototransistors are grouped according to their spectral sensitivity and distinguished by arabian figures. Bezeichnung Parameter Fotostrom Photocurrent Ee= 0.5 mW/cm2, = 950 nm, VCE = 5 V Symbol Symbol -4 -5 Wert Value -6 Einheit Unit mA IPCE 4.0 ... 8.0 6.3 ... 12.5 20 10.0 ... 20.0 24 Anstiegszeit/Abfallzeit Rise and fall time RL = 1 k, VCC = 5 V, = 950 nm, IC = 1 mA Kollektor-EmitterSattigungsspannug Collector-emitter saturation voltage IC = IPCEmin1) x 0.3, Ee = 0.5 mW/cm2 1) 1) tr , t f 17 s VCEsat 150 (< 200) 150 (< 200) 150 (< 200) mV IPCEmin ist der minimale Fotostrom der jeweiligen Gruppe. IPCEmin is the min. photocurrent of the specified group. 2007-04-03 4 SFH 3500 Photocurrent IPCE = f (VCE), Ee = Parameter I PCE 25 mA 20 OHF00521 Relative Spectral Sensitivity, Srel = f () 100 S rel % 80 70 OHF02332 Photocurrent IPCE /IPCE25 = f (TA), VCE = 5 V PCE 25 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 -25 Ptot, max 1.0 mW/cm 2 PCE 1.6 OHF01524 15 60 50 10 0.5 mW/cm 2 40 30 5 0.25 mW/cm 2 20 0.1 mW/cm 2 10 15 20 25 V 35 0 0 5 10 0 VCE 400 500 600 700 800 900 nm 1100 0 25 50 75 C 100 TA Photocurrent IPCE = f (Ee), VCE = 5 V I PCE 10 2 mA OHF00346 Capacitance CCE = f (VCE), f = 1 MHz, E = 0 CCE 18 pF 16 14 OHF00349 Dark Current ICEO = f (VCE), E = 0 CEO 10 2 nA OHF02341 Ptot 10 1 10 1 12 10 10 0 -3 -4 -5 -6 8 6 4 2 10 0 10 -1 10 -1 10 -2 -3 10 10 -2 10 -1 mW/cm 2 10 1 0 -2 10 10 -1 10 0 10 1 V 10 2 V CE 10 -2 0 10 20 30 40 50 V 70 V CE Ee Directional Characteristics Srel = f () 100 S rel % 80 70 60 50 40 30 20 10 0 -90 -60 -30 0 30 60 90 OHF00350 Total Power Dissipation Ptot = f (TA) 160 mW Ptot 140 120 100 80 60 40 20 0 OHF00958 Dark Current ICE0 = f (TA), VCE = 20 V, E = 0 CEO 10 3 nA OHF02342 10 2 10 1 10 0 0 20 40 60 80 C 100 TA 10 -1 0 20 40 60 80 C 100 TA D 2007-04-03 5 SFH 3500 Mazeichnung Package Outlines Chip position 4.5 (0.177) 3.9 (0.154) 2.05 (0.081) R 1.95 (0.077) 7.5 (0.295) 5.5 (0.217) 2.8 (0.110) 2.4 (0.094) 3.7 (0.146) 3.3 (0.130) 2.7 (0.106) 2.4 (0.094) ((3.2) (0.126)) ((R2.8 (0.110)) ((3.2) (0.126)) 6.0 (0.236) 5.4 (0.213) 4.8 (0.189) 14.7 (0.579) 13.1 (0.516) 2.54 (0.100) spacing Cathode/ Collector 4.5 (0.177) 3.9 (0.154) 7.7 (0.303) 7.1 (0.280) -0.1...0.2 (-0.004...0.008) 4.4 (0.173) GEOY6968 Empfohlenes Lotpaddesign Recommended Solderpad Design 1.3 (0.051) 2.54 (0.100) 5.3 (0.209) Bauteil positioniert Component Location on Pad Padgeometrie fur verbesserte Warmeableitung Paddesign for improved heat dissipation Lotstopplack Solder resist Lotpad 3 (0.118) 7 (0.276) Cu-Flache > 20 mm 2 Cu-area > 20 mm 2 OHFY2449 Mae in mm (inch) / Dimensions in mm (inch) 2007-04-03 6 SFH 3500 Lotbedingungen Soldering Conditions Reflow Lotprofil fur bleifreies Loten Reflow Soldering Profile for lead free soldering 300 C 255 C 240 C 217 C 200 30 s max 150 120 s max 100 Ramp Up 3 K/s (max) 25 C 0 0 50 100 150 200 250 s 300 100 s max Ramp Down 6 K/s (max) 10 s min Vorbehandlung nach JEDEC Level 3 Preconditioning acc. to JEDEC Level 3 (nach J-STD-020C) (acc. to J-STD-020C) OHLA0687 T 250 Maximum Solder Profile Recommended Solder Profile Minimum Solder Profile C 260 C +0C -5 245 C 5 C C 235 C +5C -0 50 t Wellenloten (TTW) TTW Soldering 300 C T 250 235 C ... 260 C 2. Welle 2. wave 200 1. Welle 1. wave 150 100 C ... 130 C 100 2 K/s 50 Zwangskuhlung forced cooling ca 200 K/s 5 K/s 2 K/s (nach CECC 00802) (acc. to CECC 00802) OHLY0598 10 s Normalkurve standard curve Grenzkurven limit curves 0 0 50 100 150 t 200 s 250 2007-04-03 7 OPTO SEMICONDUCTORS SFH 3500 Published by OSRAM Opto Semiconductors GmbH Wernerwerkstrasse 2, D-93049 Regensburg www.osram-os.com (c) All Rights Reserved. The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization. Packing Please use the recycling operators known to you. We can also help you - get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be expressly authorized for such purpose! Critical components 1 , may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS. 1 A critical component is a component usedin a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered. 2007-04-03 8 |
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