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| MBR870 thru MBR8100 Wide Temperature Range and High Tjm Schottky Barrier Rectifiers Dimensions TO-220AC A C(TAB) A C C Dim. A B C D E F G H J K L M N Q Inches Min. Max. 0.500 0.580 0.560 0.650 0.380 0.420 0.139 0.161 2.300 0.420 0.100 0.135 0.045 0.070 0.250 0.025 0.035 0.190 0.210 0.140 0.190 0.015 0.022 0.080 0.115 0.025 0.055 Milimeter Min. Max. 12.70 14.73 14.23 16.51 9.66 10.66 3.54 4.08 5.85 6.85 2.54 3.42 1.15 1.77 6.35 0.64 0.89 4.83 5.33 3.56 4.82 0.38 0.56 2.04 2.49 0.64 1.39 A=Anode, C=Cathode, TAB=Cathode VRRM V 70 80 90 100 VRMS V 49 56 63 70 VDC V 70 80 90 100 MBR870 MBR880 MBR890 MBR8100 Symbol I(AV) IFSM dv/dt Characteristics Maximum Average Forward Rectified Current @TC=110oC Maximum Ratings 8 125 10000 IF=8A IF=8A IF=16A IF=16A @TJ=25oC @TJ=125oC @TJ=25oC @TJ=125oC @TJ=25oC @TJ=125oC 0.85 0.75 0.95 0.85 0.1 7 2.0 280 -55 to +150 -55 to +175 Unit A A V/us Peak Forward Surge Current 8.3ms Single Half-Sine-Wave Superimposed On Rated Load (JEDEC METHOD) Voltage Rate Of Change (Rated VR) Maximum Forward Voltage (Note 1) VF V IR ROJC CJ TJ TSTG Maximum DC Reverse Current At Rated DC Blocking Voltage Typical Thermal Resistance (Note 2) Typical Junction Capacitance (Note 3) Operating Temperature Range Storage Temperature Range mA o C/W pF o o C C NOTES: 1. 300us Pulse Width, Duty Cycle 2%. 2. Thermal Resistance Junction To Case. 3. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC. FEATURES * Metal of silicon rectifier, majority carrier conducton * Guard ring for transient protection * Low power loss, high efficiency * High current capability, low VF * High surge capacity * For use in low voltage, high frequency inverters, free whelling, and polarity protection applications MECHANICAL DATA * Case: TO-220AC molded plastic * Polarity: As marked on the body * Weight: 0.08 ounces, 2.24 grams * Mounting position: Any MBR870 thru MBR8100 Wide Temperature Range and High Tjm Schottky Barrier Rectifiers 10 PEAK FORWARD SURGE CURRENT, AMPERES FIG.1 - FORWARD CURRENT DERATING CURVE AVERAGE FORWARD CURRENT AMPERES FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT 150 125 100 75 50 25 0 1 2 5 10 20 50 100 8 6 4 2 RESISTIVE OR INDUCTIVE LOAD 8.3ms Single Half-Sine-Wave (JEDEC METHOD) 0 25 50 75 100 125 150 175 CASE TEMPERATURE , C NUMBER OF CYCLES AT 60Hz FIG.3 - TYPICAL REVERSE CHARACTERISTICS 100 FIG.4 - TYPICAL FORWARD CHARACTERISTICS 100 INSTANTANEOUS FORWARD CURRENT ,(A) INSTANTANEOUS REVERSE CURRENT ,(mA) 10 TJ = 125 C 10 1 TJ = 75 C 0.1 1.0 0.01 TJ = 25 C TJ = 25 C PULSE WIDTH 300ua 300us 2% Duty cycle 0.001 0 20 40 60 80 100 120 140 0.1 0.1 0.2 0.3 0.4 0.5 PERCENT OF RATED PEAK REVERSE VOLTAGE ,(%) 0.6 0.7 0.8 0.9 1.0 INSTANTANEOUS FORWARD VOLTAGE , VOLTS FIG.5 - TYPICAL JUNCTION CAPACITANCE 10000 CAPACITANCE , (pF) 1000 TJ = 25 C, f= 1MHz 100 0.1 1 4 10 100 REVERSE VOLTAGE , VOLTS |
Price & Availability of MBR870
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