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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4941 DESCRIPTION With TO-3PML package Switching power transistor High breakdown voltage PINNING PIN 1 2 3 Base Collector Fig.1 simplified outline (TO-3PML) and symbol Emitter DESCRIPTION Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO VCEO VEBO IC ICM IB IB PT Tj Tstg TOR NDU ICO E SEM ANG INCH PARAMETER CONDITIONS VALUE 1500 800 7 Collector-base voltage Open emitter Collector-emitter voltage Open base Emitter-base voltage Open collector Collector current 6 Collector current-Peak 12 3 6 TC=25ae 65 150 -55~150 Base current Base current-Peak Total power dissipation Junction temperature Storage temperature UNIT V V V A A A A W ae ae THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance from junction to case VALUE 1.92 UNIT ae /W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-base voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=0.2A ;IB=0 IC=1mA ;IE=0 IC=3A ;IB=0.6A IC=3A; IB=0.6A VCB=1200V; IE=0 VCE=RatedVCEO; IB=0 VEB=RatedVEBO; IC=0 IC=1A ; VCE=5V IC=1mA ; VCE=5V 15 7 MIN 800 1500 2SC4941 SYMBOL VCEO(SUS) VCBO VCEsat VBEsat ICBO ICEO IEBO hFE-1 hFE-2 fT TYP. MAX UNIT V V 0.5 1.5 100 100 100 |I |I |I V V A A A Switching times ton ts tf TOR NDU ICO E SEM ANG INCH Transition frequency IC=0.6A ; VCE=10V 8 Turn-on time Storage time 0.5 IC=3A IB1=0.6A; IB2=-1.2A VBB2=4V RL=85| 3.5 Fall time 0.3 MHz |I |I |I s s s 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC4941 TOR NDU ICO E SEM ANG INCH Fig.2 Outline dimensions (unindicated tolerance:A 0.10 mm) 3 |
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