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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3857 DESCRIPTION With MT-200 package Complement to type 2SA1493 APPLICATIONS Audio and general purpose PINNING(see Fig.2) PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (MT-200) and symbol DESCRIPTION Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg Collector-base voltage PARAMETER CHA IN Collector current Base current Collector-emitter voltage Emitter-base voltage E SEM NG Open base Open emitter OND IC CONDITIONS TOR UC VALUE 200 200 6 15 5 UNIT V V V A A W ae ae Open collector Collector power dissipation Junction temperature Storage temperature TC=25ae 150 150 -55~150 Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Output capacitance CONDITIONS IC=50mA; IB=0 IC=10 A;IB=1 A VCB=200V; IE=0 VEB=6V; IC=0 IC=5A ; VCE=4V IE=-0.5A ; VCE=12V IE=0; VCB=10V;f=1MHz 50 20 250 MIN 200 TYP. 2SC3857 SYMBOL V(BR)CEO VCEsat ICBO IEBO hFE fT COB MAX UNIT V 3.0 100 100 180 |I |I V A A MHz pF Switching times ton ts tf Turn-on time Fall time Storage time hFE classifications O 50-100 P 70-140 CHA IN Y E SEM NG IC=5A;RL=12| IB1=- IB2=0.5A VCC=60V OND IC TOR UC 0.30 2.40 |I 0.40 |I s s |I s 90-180 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC3857 CHA IN E SEM NG OND IC TOR UC Fig.2 Outline dimensions 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3857 CHA IN E SEM NG OND IC TOR UC 4 |
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