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 3.3 Volt TVS Array For ESD and Latch-Up Protection
PROTECTION PRODUCTS Description
The SMS series of TVS arrays are designed to protect sensitive electronics from damage or latch-up due to ESD, lightning, and other voltage-induced transient events. Each device will protect up to four lines operating at 3.3 volts. The SMS3.3 is a solid-state device designed specifically for transient suppression. It is constructed using Semtech's proprietary EPD process technology. The EPD process provides low standoff voltages with significant reductions in leakage currents and capacitance over traditional pn junction processes. They offer desirable characteristics for board level protection including fast response time, low clamping voltage and no device degradation. The SMS3.3 may be used to meet the immunity requirements of IEC 61000-4-2, level 4 (15kV air, 8kV contact discharge). The low cost SOT23-6L package makes them ideal for use in portable electronics such as cell phones, PDA's, and notebook computers.
SMS3.3
Features
Transient protection for data lines to IEC 61000-4-2 (ESD) 15kV (air), 8kV (contact) IEC 61000-4-4 (EFT) 40A (5/50ns) IEC 61000-4-5 (Lightning) 12A (8/20s) Protects four I/O lines Working voltage: 3.3V Low leakage current (<1A) Low clamping voltage Low capacitance (35pF typical) Solid-state EPD TVS technology
Mechanical Characteristics
EIAJ SOT23-6L package Molding compound flammability rating: UL 94V-0 Marking : Marking Code Packaging : Tape and Reel per EIA 481
Applications
Cell phone Handsets and Accessories Microprocessor Based Equipment Personal Digital Assistants (PDA's) and Pagers Desktops PC and Servers Notebook, Laptop, and Palmtop Computers Portable Instrumentation Peripherals MP3 Players Cordless Phones
Equivalent Circuit Diagram
Schematic & PIN Configuration
SOT23-6L (Top View)
Revision 08/11/04 1 United States Patent No. www.semtech.com
SMS3.3
PROTECTION PRODUCTS Absolute Maximum Rating
Rating Peak Pulse Power (tp = 8/20s) Peak Pulse Current (tp = 8/20s) ESD per IEC 61000-4-2 (Air) ESD per IEC 61000-4-2 (Contact) Soldering Temperature Operating Temperature Storage Temperature Symbol Ppk IPP VESD TL TJ TSTG Value 200 12 >25 >15 260 (10 seconds) -55 to +125 -55 to +150 Units Watts A kV
o o o
C C C
Electrical Characteristics
SMS3.3 Par ame te r Reverse Stand-Off Voltage Punch-Through Voltage Snap -Back Voltage Reverse Leakage Current Clamp ing Voltage Clamp ing Voltage Clamp ing Voltage Steering Diode Forward Voltage (Reverse Clamp ing Voltage) Junction Cap acitance Symbo l V RWM V PT V SB IR VC VC VC VF Cj IPT = 2 A ISB = 50mA V RWM = 3.3V, T=25C IPP = 1A , tp = 8/20 s A ny I/O to Ground IPP = 5A , tp = 8/20 s A ny I/O to Ground IPP = 12A , tp = 8/20 s A ny I/O to Ground IPP = 1A , tp = 8/20 s A ny I/O to Ground Each I/O p in and Ground V R = 0V, f = 1MHz 35 3.5 2.8 0.05 0.5 4.5 6.8 8.7 1.7 40 Co nditio ns Minimum Typical Maximum 3.3 Units V V V A V V V V pF
2004 Semtech Corp.
2
www.semtech.com
SMS3.3
PROTECTION PRODUCTS PRODUCTS
Non-Repetitive Peak Pulse Power vs. Pulse Time
10 Peak Pulse Power - PPk (kW)
Power Derating
110 100 90 % of Rated Power or I PP 80 70 60 50 40 30 20 10
1
0.1
0.01 0.1 1 10 Pulse Duration - tp (s) 100 1000
0 0 25 50 75 100 125 150 Ambient Temperature - TA (oC)
Pulse Waveform
110 100 90 80 70 60 50 40 30 20 10 0 0 5 10 15 Time (s) 20 25 30 td = IPP/2
PP
Clamping Voltage Peak Clamping Voltage vs. Peak Pulse Current
10
Clamping Voltage - V (V) C
Waveform Parameters: tr = 8s td = 20s e-t
9 8 7 6 5 4 3 2 1 0 0 2 4 6 8 10 12 14 Peak Pulse Current - IPP (A)
Percent of I
Waveform Parameters: tr = 8s td = 20s
For w ard Voltage vs. For w ard Current orward Voltage For ard orw
10 9 8 Forward Voltage- V (V) F Capacitance - Cj (pF) 7 6 5 4 3 2 1 0 0 2 4 6 8 10 12 14 Forward Current - IF (A) 30 40
Re erse Voltage Capacitance vs. Rever se Voltage
I/O to GND f = 1MHz
20
Waveform Parameters: tr = 8s td = 20s
10
0 0 1 2 Reverse Voltage - VR (V) 3 4
2004 Semtech Corp.
3
www.semtech.com
SMS3.3
PROTECTION PRODUCTS Applications Information
Device Connection for Protection of Four Data Lines The SMS3.3 is designed to protect up to four unidirectional data lines. The device is connected as follows: 1. Unidirectional protection of four I/O lines is achieved by connecting pins 1, 3, 4 and 6 to the data lines. Pin 2 and 5 are connected to ground. The ground connections should be made directly to the ground plane for best results. The path length is kept as short as possible to reduce the effects of parasitic inductance in the board traces. Circuit Board Layout Recommendations for Suppression of ESD Good circuit board layout is critical for the suppression of ESD induced transients. The following guidelines are recommended: Place the TVS near the input terminals or connectors to restrict transient coupling. Minimize the path length between the TVS and the protected line. Minimize all conductive loops including power and ground loops. The ESD transient return path to ground should be kept as short as possible. Never run critical signals near board edges. Use ground planes whenever possible. Matte Tin Lead Finish Matte tin has become the industry standard lead-free replacement for SnPb lead finishes. A matte tin finish is composed of 100% tin solder with large grains. Since the solder volume on the leads is small compared to the solder paste volume that is placed on the land pattern of the PCB, the reflow profile will be determined by the requirements of the solder paste. Therefore, these devices are compatible with both lead-free and SnPb assembly techniques. In addition, unlike other lead-free compositions, matte tin does not have any added alloys that can cause degradation of the solder joint. Protection of Four Unidirectional Lines SMS3.3 Circuit Diagram
2004 Semtech Corp.
4
www.semtech.com
SMS3.3
PROTECTION PRODUCTS PRODUCTS Typical Applications
2004 Semtech Corp.
5
www.semtech.com
SMS3.3
PROTECTION PRODUCTS Outline Drawing - SO-8 Outline Drawing -SOT23 6L
A e1 N EI 1 ccc C 2X N/2 TIPS B 2 E D H GAGE PLANE 0.25 e DETAIL D aaa C A2 SEATING PLANE C A1 bxN bbb C A-B D A SEE DETAIL SIDE VIEW L (L1) H c
DIM
A A1 A2 b c D E1 E e e1 L L1 N 01 aaa bbb ccc
DIMENSIONS INCHES MILLIMETERS MIN NOM MAX MIN NOM MAX
.057 .035 .000 .006 .035 .045 .051 .010 .020 .003 .009 .110 .114 .118 .060 .063 .069 .110 BSC .037 BSC .075 BSC .012 .018 .024 (.024) 6 0 10 .004 .008 .008 1.45 0.90 0.00 0.15 .90 1.15 1.30 0.25 0.50 0.08 0.22 2.80 2.90 3.00 1.50 1.60 1.75 2.80 BSC 0.95 BSC 1.90 BSC 0.30 0.45 0.60 (0.60) 6 0 10 0.10 0.20 0.20
2X E/2
01
A
A
NOTES: 1. CONTROLLING DIMENSIONS ARE IN MILLIMETERS (ANGLES IN DEGREES). 2. DATUMS -A- AND -B- TO BE DETERMINED AT DATUM PLANE -H3. DIMENSIONS "E1" AND "D" DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS.
Land Pattern -SOT23 6L
X
DIM
(C) G Y Z C G P X Y Z
DIMENSIONS MILLIMETERS INCHES
(.098) .055 .037 .024 .043 .141 (2.50) 1.40 0.95 0.60 1.10 3.60
P
NOTES: 1. THIS LAND PATTERN IS FOR REFERENCE PURPOSES ONLY. CONSULT YOUR MANUFACTURING GROUP TO ENSURE YOUR COMPANY'S MANUFACTURING GUIDELINES ARE MET.
2004 Semtech Corp.
6
www.semtech.com
SMS3.3
PROTECTION PRODUCTS PRODUCTS Marking Ordering Information
Part Number SMS3.3.TC SMS3.3.TCT Lead Finish SnPb Pb free Qty per Reel 3,000 3,000 R eel Size 7 Inch 7 Inch
Note: (1) No suffix indicates tube pack.
Top Side Mark
Tape and Reel Specification
Device Orientation in Tape:
Direction of Feed Tape Specifications (per EIA 481) Reel Material: Tape Material: Tape Width: Component Pitch (max.): Component Cavity Play: Static Dissipative Static Dissipative 8mm +/- 0.30mm 4mm +/- 0.10mm 20
Contact Information
Semtech Corporation Protection Products Division 200 Flynn Rd., Camarillo, CA 93012 Phone: (805)498-2111 FAX (805)498-3804
2004 Semtech Corp. 7 www.semtech.com


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