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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor MJ12021 DESCRIPTION *Collector-Emitter Sustaining Voltage: VCEO(SUS) = 450V(Min) *Fast Turn-Off Time APPLICATIONS *Designed for high resolution video systems, such as : high density graphic displays, data terminals, video scanners. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VCEV VCEO(SUS) VEBO IC ICM IB B PARAMETER Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Base Current-Peak Collector Power Dissipation@TC=25 Junction Temperature Storage Temperature VALUE 850 450 6 8 16 6 12 150 200 -65~200 UNIT V V V A A A A W IBM PC TJ Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 1.17 UNIT /W isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL VCEO(SUS) VCE(sat) VBE(sat) ICEV ICER IEBO hFE fT COB PARAMETER Collector-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain Current-Gain--Bandwidth Product Output Capacitance CONDITIONS IC=100mA ; IB=0 IC= 5A; IB= 1A B MJ12021 MIN 450 TYP. MAX UNIT V 1.2 1.5 0.25 1.5 2.5 1.0 5 15 350 V V mA mA mA IC= 5A; IB= 1A B VCEV=850V;VBE(off)=1.5V VCEV=850V;VBE(off)=1.5V;TC=100 VCE= 850V; RBE= 50,TC= 100 VEB= 6V; IC=0 IC= 8A ; VCE= 5V IC= 1A; VCE= 10V; ftest=1MHz IE= 0; VCB= 10V; ftest=1kHz MHz pF Switching times;Inductive Load ts tf Storage Time Fall Time IC= 5A , VCC= 60V; IB1= 1A; PW= 8s; VBE(off)= 4V Duty Cycle2.0% 550 100 1200 300 ns ns isc Websitewww.iscsemi.cn 2 |
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