 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| SMD Type HEXFET Power MOSFET KRF1302S TO-263 Features Advanced Process Technology Ultra Low On-Resistance + .2 8 .7 -00.2 + .1 1 .2 7 -00.1 Transistors IC Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 Dynamic dv/dt Rating 175 Operating Temperature +0.1 1.27-0.1 0.1max +0.1 0.81-0.1 Fast Switching + .2 5 .2 8 -00.2 Repetitive Avalanche Allowed up to Tjmax 2.54 +0.2 -0.2 +0.1 5.08-0.1 + .2 2 .5 4 -00.2 + .2 1 5 .2 5 -00.2 2.54 +0.2 0.4-0.2 Absolute Maximum Ratings Ta = 25 Parameter Continuous Drain Current, VGS @ 10V,TC = 25 Continuous Drain Current, VGS @ 10V,TC = 100 Pulsed Drain Current Power Dissipation TC = 25 Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current*1 Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Junction-to-Case Junction-to-Ambient (PCB mount) R JC R JA VGS EAS IAR EAR dv/dt TJ,TSTG TBD -55 to + 175 300 0.74 40 /W Symbol ID ID IDM PD Rating 174 120 700 200 1.4 20 350 Fig.1.2 W W/ V mJ A mJ V/ns A Unit Fig1. Unclamped Inductive Test Circuit Fig 2. Unclamped Inductive Waveforms 5 .6 0 11gate Gate 22drain Drain 33source Source www.kexin.com.cn 1 SMD Type KRF1302S Electrical Characteristics Ta = 25 Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Intermal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance Continuous Source Current Pulsed Source Current Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time Body Diode) Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss Coss Coss Coss eff. IS ISM VSD trr Qrr ton TJ = 25 , IS = 104A, VGS = 0V TJ = 25 , IF = 104A di/dt = 100A/ s VGS = 0V VDS = 25V f = 1.0MHz VGS = 0V, VDS = 1.0V, f = 1.0MHz VGS = 0V, VDS = 16V, f = 1.0MHz VGS = 0V, VDS = 0V to 16V Symbol V(BR)DSS V(BR)DSS/ Transistors IC Testconditons VGS = 0V, ID = 250A TJ Reference to 25 , ID = 1mA VGS = 10V, ID = 104A VDS = VGS, ID = 250 A VDS = 15V, ID = 104A VDS = 20V, VGS = 0V VDS = 16V, VGS = 0V, TJ = 150 Min 20 Typ Max Unit V 0.021 3.3 2.0 6.7 20 250 200 -200 79 18 31 28 130 47 16 4.5 120 27 46 4.0 4.0 V/ m V S A RDS(on) VGS(th) gfs IDSS IGSS VGS = 20V VGS = -20V ID = 104A VDS = 16V VGS = 10V VDD = 11V ID = 104A RG = 4.5 VGS = 10V nA nC ns nH 7.5 3600 2370 520 5710 2370 3540 174 A Body Diode) 700 1.3 66 130 100 200 V ns C pF Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) 2 www.kexin.com.cn |
Price & Availability of KRF1302S
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |