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| SMD Type P-Channel 12-V (D-S) MOSFET KI5473DC IC IC Features TrenchFET Power MOSFETS Low rDS(on) and Excellent Power Handling In Compact Footprint Absolute Maximum Ratings Ta = 25 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 Pulsed Drain Current Continuous Source Current * Maximum Power Dissipation * TA = 25 TA = 85 Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) Parameter Maximum Junction-to-Ambient* Maximum Junction-to-Foot (Drain) * Surface Mounted on 1" X 1' FR4 Board. t 5 sec Symbol RthJA RthJF Typ 40 80 15 TJ, Tstg )* TA = 25 TA = 85 IDM IS PD -2.1 2.5 1.3 -55 to 150 260 Max 50 95 20 /W Unit Symbol VDS VGS ID -8.1 -5.9 20 -1.1 1.3 0.7 W 5 secs Steady State -12 8 -5.9 -4.3 A Unit V Steady-State Steady-State www.kexin.com.cn 1 SMD Type KI5473DC Electrical Characteristics Ta = 25 Parameter Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current* Symbol VGS(th) IGSS IDSS ID(on) Testconditons VDS = VGS, ID = -250 A VDS = 0 V, VGS = 8V Min -0.40 Typ Max -1.0 100 -1 -5 -20 0.022 0.028 0.036 20 -0.8 21 VDS = -6V, VGS = -4.5 V, ID = -5.9 A 3.1 6.0 25 VDD = -6 V, RL = 6 ID = -1 A, VGEN = -4.5V, RG = 6 50 145 90 IF = -1.1 A, di/dt = 100 A/ s 70 40 75 220 135 105 -1.2 32 0.027 0.0335 0.045 IC IC Unit V nA A A A VDS = -9.6V, VGS = 0 V VDS = -9.6V, VGS = 0 V, TJ = 85 VDS - 5 V, VGS = -4.5 V VGS = -4.5 V, ID = -5.9A Drain-Source On-State Resistance* rDS(on) VGS = -2.5 V, ID = -5.3A VGS = -1.8 V, ID = -2.2A Forward Transconductance* Schottky Diode Forward Voltage* Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time * Pulse test; pulse width 300 s, duty cycle gfs VSD Qg Qgs Qgd td(on) tr td(off) tf trr 2%. VDS = -5V, ID = -5.9A IS = -1.1 A, VGS = 0 V S V nC nC nC ns ns ns ns ns 2 www.kexin.com.cn |
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