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| FDZ391P P-Channel 1.5V PowerTrench(R) WL-CSP MOSFET September 2008 FDZ391P P-Channel 1.5 V PowerTrench(R) Thin WL-CSP MOSFET -20 V, -3 A, 85 m Features Max rDS(on) = 85 m at VGS = -4.5 V, ID = -1 A Max rDS(on) = 123 m at VGS = -2.5 V, ID = -1 A Max rDS(on) = 200 m at VGS = -1.5 V, ID = -1 A Occupies only 1.5 mm2 of PCB area Ultra-thin package: less than 0.4 mm height when mounted to PCB RoHS Compliant tm General Description Designed on Fairchild's advanced 1.5 V PowerTrench process with state of the art "low pitch" Thin WLCSP packaging process, the FDZ391P minimizes both PCB space and rDS(on). This advanced WLCSP MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, ultra-low profile packaging, low gate charge, and low rDS(on). Applications Battery management Load switch Battery protection Pin 1 S S D D S G S G BOTTOM TOP D MOSFET Maximum Ratings TA = 25 C unless otherwise noted Symbol VDS VGS ID PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Power Dissipation Power Dissipation TA = 25 C TA = 25 C (Note 1a) (Note 1b) TA = 25 C (Note 1a) Ratings -20 8 -3 -15 1.9 0.9 -55 to +150 Units V V A W C Operating and Storage Junction Temperature Range Thermal Characteristics RJA RJA Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient (Note 1a) (Note 1b) 65 133 C/W Package Marking and Ordering Information Device Marking 6 Device FDZ391P Package WL-CSP Thin Reel Size 7 '' Tape Width 8 mm Quantity 5000 units (c)2008 Fairchild Semiconductor Corporation FDZ391P Rev.B 1 www.fairchildsemi.com FDZ391P P-Channel 1.5V PowerTrench(R) WL-CSP MOSFET Electrical Characteristics TJ = 25 C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS BVDSS TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = -250 A, VGS = 0 V ID = -250 A, referenced to 25 C VDS = -16 V, VGS = 0 V VGS = 8 V, VDS = 0 V -20 -12 -1 100 V mV/C A nA On Characteristics VGS(th) VGS(th) TJ Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient VGS = VDS, ID = -250 A ID = -250 A, referenced to 25 C VGS = -4.5 V, ID = -1 A rDS(on) Drain to Source On Resistance VGS = -2.5 V, ID = -1 A VGS = -1.5 V, ID = -1 A VGS = -4.5 V, ID = -1 A TJ = 125 C ID(on) gFS On to State Drain Current Forward Transconductance VGS = -4.5 V, VDS = - 5 V VDS = -5 V, ID = -1 A -10 7 -0.4 -0.6 2 74 90 140 100 85 123 200 123 A S m -1.5 V mV/C Dynamic Characteristics Ciss Coss Crss Rg Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance VDS = -10 V, VGS = 0 V, f = 1 MHz f = 1 MHz 800 155 90 9 1065 205 135 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate to Source Gate Charge Gate to Drain "Miller" Charge VGS = -4.5 V VDD = -10 V ID = -1 A VDD = -10 V, ID = -1 A VGS = -4.5 V, RGEN = 6 11 10 50 30 9 1 2 20 20 80 48 13 ns ns ns ns nC nC nC Drain-Source Diode Characteristics IS VSD trr Qrr Maximum continuous Drain-Source Diode Forward Current Source to Drain Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0 V, IS = -1.1 A (Note 2) -0.7 21 5 -1.1 -1.2 A V ns nC IF = -1 A, di/dt = 100 A/s Notes: 1. RJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RJC is guaranteed by design while RCA is determined by the user's board design. a. 65 C/W when mounted on a 1 in2 pad of 2 oz copper. b. 133 C/W when mounted on a minimum pad of 2 oz copper. 2. Pulse Test: Pulse Width < 300s, Duty cycle < 2.0%. FDZ391P Rev.B 2 www.fairchildsemi.com FDZ391P P-Channel 1.5V PowerTrench(R) WL-CSP MOSFET Typical Characteristics TJ = 25 C unless otherwise noted 16 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 2.0 1.8 1.6 1.4 1.2 1.0 VGS = -4.5 V VGS = -3.5 V VGS = -1.5 V PULSE DURATION = 300 s DUTY CYCLE = 2.0% MAX 14 -ID, DRAIN CURRENT (A) 12 10 8 6 4 2 0 0 0.5 PULSE DURATION = 300 s DUTY CYCLE = 2.0% MAX VGS = -4.5 V VGS = -3.5 V VGS = -2.5 V VGS = -2.0 V VGS = -2.0 V VGS = -2.5 V VGS = -1.5 V 0.8 0 2 4 6 8 10 -ID, DRAIN CURRENT(A) 12 14 16 1.0 1.5 2.0 2.5 3.0 3.5 4.0 -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 1. On Region Characteristics Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 240 rDS(on), DRAIN TO SOURCE ON-RESISTANCE (m) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 1.5 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (oC) 150 ID = -1 A VGS = -4.5 V ID = - 0.5 A PULSE DURATION = 300 s DUTY CYCLE = 2.0% MAX 200 160 120 80 TJ = 25 oC TJ = 125 oC 40 1 2 3 4 -VGS, GATE TO SOURCE VOLTAGE (V) 5 Figure 3. Normalized On Resistance vs Junction Temperature IS, REVERSE DRAIN CURRENT (A) Figure 4. On-Resistance vs Gate to Source Voltage 60 15 12 9 6 TJ = 125 oC PULSE DURATION = 300 s DUTY CYCLE = 2.0% MAX 10 1 VGS = 0 V -ID, DRAIN CURRENT (A) VDD = -5 V TJ = 125 oC 0.1 0.01 0.001 0.0001 TJ = 25 oC 3 0 0.5 TJ = 25 oC TJ = -55 oC TJ = -55 oC 1.0 1.5 2.0 -VGS, GATE TO SOURCE VOLTAGE (V) 2.5 0 0.2 0.4 0.6 0.8 1.0 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) 1.4 Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current FDZ391P Rev.B 3 www.fairchildsemi.com FDZ391P P-Channel 1.5V PowerTrench(R) WL-CSP MOSFET Typical Characteristics TJ = 25 C unless otherwise noted -VGS, GATE TO SOURCE VOLTAGE(V) 5 ID = -1 A 2000 4 3 2 1 0 0 2 1000 CAPACITANCE (pF) VDD = -5 V VDD = -10 V VDD = -15 V Ciss Coss 100 50 0.1 f = 1 MHz VGS = 0 V Crss 4 6 8 10 12 Qg, GATE CHARGE(nC) 1 10 -VDS, DRAIN TO SOURCE VOLTAGE (V) 20 Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage -IS, SOURCE1 TO SOURCE2 CURRENT (A) 4 -ID, DRAIN CURRENT (A) 30 10 100 us 1 ms 3 VGS = -4.5 V 1 THIS AREA IS LIMITED BY rDS(on) 2 VGS = - 2.5 V 10 ms 100 ms 1s 10 s DC 1 RJA = 65 C/W o 0.1 SINGLE PULSE TJ = MAX RATED RJA = 133 oC/W TA = 25 C o 0 25 50 75 100 o 125 150 0.01 0.1 1 10 60 TA, CASE TEMPERATURE ( C) -VS, SOURCE1 TO SOURCE2 VOLTAGE (V) Figure 9. Maximum Continuous Drain Current vs Ambient Temperature 50 P(PK), PEAK TRANSIENT POWER (W) Figure 10. Forward Bias Safe Operating Area 10 VGS = -10 V SINGLE PULSE RJA = 133 oC/W TA = 25 C o 1 0.5 -3 10 10 -2 10 -1 1 t, PULSE WIDTH (sec) 10 100 1000 Figure 11. Single Pulse Maximum Power Dissipation FDZ391P Rev.B 4 www.fairchildsemi.com FDZ391P P-Channel 1.5V PowerTrench(R) WL-CSP MOSFET Typical Characteristics TJ = 25 C unless otherwise noted 2 1 NORMALIZED THERMAL IMPEDANCE, ZJA DUTY CYCLE-DESCENDING ORDER 0.1 D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJA x RJA + TA -1 SINGLE PULSE RJA = 133 C/W o 0.01 -3 10 10 -2 10 1 10 t, RECTANGULAR PULSE DURATION (sec) 100 1000 Figure 12. Transient Thermal Response Curve FDZ391P Rev.B 5 www.fairchildsemi.com FDZ391P P-Channel 1.5V PowerTrench(R) WL-CSP MOSFET Dimensional Outline and Pad Layout FDZ391P Rev.B 6 www.fairchildsemi.com FDZ391P P-Channel 1.5V PowerTrench(R) WL-CSP MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. Build it NowTM CorePLUSTM CorePOWERTM CROSSVOLTTM CTLTM Current Transfer LogicTM EcoSPARK(R) EfficentMaxTM EZSWITCHTM * TM (R) Fairchild(R) Fairchild Semiconductor(R) FACT Quiet SeriesTM FACT(R) FAST(R) FastvCoreTM FlashWriter(R) * FPSTM F-PFSTM FRFET(R) Global Power ResourceSM Green FPSTM Green FPSTM e-SeriesTM GTOTM IntelliMAXTM ISOPLANARTM MegaBuckTM MICROCOUPLERTM MicroFETTM MicroPakTM MillerDriveTM MotionMaxTM Motion-SPMTM OPTOLOGIC(R) OPTOPLANAR(R) (R) tm PowerTrench(R) Programmable Active DroopTM QFET(R) QSTM Quiet SeriesTM RapidConfigureTM The Power Franchise(R) tm PDP SPMTM Power-SPMTM TinyBoostTM TinyBuckTM TinyLogic(R) TINYOPTOTM TM TinyPowerTM Saving our world, 1mW /W /kW at a timeTM TinyPWMTM SmartMaxTM TinyWireTM SMART STARTTM SerDesTM SPM(R) STEALTHTM SuperFETTM UHC(R) SuperSOTTM-3 Ultra FRFETTM SuperSOTTM-6 UniFETTM SuperSOTTM-8 VCXTM SupreMOSTM VisualMaxTM SyncFETTM (R) * EZSWITCHTM and FlashWriter(R) are trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation's Anti-Counterfeiting Policy. Farichild's Anti-Counterfeiting Policy is also stated on our external website, www.fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Farichild strongly encourages customers to purchase Farichild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild's quality standards for handing and storage and provide access to Farichild's full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Farichild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative / In Design Definition Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I36 Preliminary First Production No Identification Needed Obsolete Full Production Not In Production FDZ391P Rev.B 7 www.fairchildsemi.com |
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