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| FDMC8678S N-Channel Power Trench(R) SyncFETTM December 2007 FDMC8678S N-Channel Power Trench 30V, 18A, 5.2m Features Max rDS(on) = 5.2m at VGS = 10V, ID = 15A Max rDS(on) = 8.7m at VGS = 4.5V, ID = 12A Advanced Package and Silicon combination for low rDS(on) and high efficiency SyncFET Schottky Body Diode MSL1 robust package design RoHS Compliant (R) SyncFET TM General Description tm The FDMC8678S has been designed to minimize losses in power conversion applications. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode. Applications Synchronous Rectifier for DC/DC Converters Notebook Vcore/ GPU low side switch Networking Point of Load low side switch Telecom secondary side rectification Pin 1 S S S D D D D D D TOP Power 33 D D G 5 6 7 8 4 3 2 1 G S S S Bottom MOSFET Maximum Ratings TA = 25C unless otherwise noted Symbol VDS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limited) ID -Continuous (Silicon limited) -Continuous -Pulsed EAS PD TJ, TSTG Single Pulse Avalanche Energy Power Dissipation Power Dissipation TC = 25C TA = 25C (Note 1a) (Note 3) TC = 25C TC = 25C TA = 25C (Note 1a) Ratings 30 20 18 66 15 60 181 41 2.3 -55 to +150 mJ W C A Units V V Operating and Storage Junction Temperature Range Thermal Characteristics RJC RJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient (Note 1a) 3 53 C/W Package Marking and Ordering Information Device Marking 8678S Device FDMC8678S Package Power 33 1 Reel Size 13'' Tape Width 12 mm Quantity 3000 units (c)2007 Fairchild Semiconductor Corporation FDMC8678S Rev.C www.fairchildsemi.com FDMC8678S N-Channel Power Trench(R) SyncFETTM Electrical Characteristics TJ = 25C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS BVDSS TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 1mA, VGS = 0V ID = 1mA, referenced to 25C VGS = 0V, VDS = 24V, VGS = 20V, VDS = 0V 30 38 500 100 V mV/C A nA On Characteristics VGS(th) VGS(th) TJ rDS(on) gFS Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient Static Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = 1mA ID = 1mA, referenced to 25C VGS = 10V, ID = 15A VGS = 4.5V, ID = 12A VGS = 10V, ID = 15A, TJ = 125C VDD = 10V, ID = 15A 1 1.9 -3.7 4.3 6.3 6 55 5.2 8.7 10 S m 3 V mV/C Dynamic Characteristics Ciss Coss Crss Rg Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance VDS = 15V, VGS = 0V, f = 1MHz f = 1MHz 1560 810 90 0.8 2075 1080 135 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg Qg Qgs Qgd Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Total Gate Charge Gate to Source Charge Gate to Drain "Miller" Charge VGS = 0V to 10V VGS = 0V to 4.5V VDD = 15V, ID = 15A VDD = 15V, ID = 15A, VGS = 10V, RGEN = 6 11 3 24 2 24 11 4.7 2.8 20 10 39 10 34 16 ns ns ns ns nC nC nC nC Drain-Source Diode Characteristics VSD trr Qrr Source to Drain Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, IS = 3A IF = 15A, di/dt = 300A/s (Note 2) 0.5 31 33 0.7 51 51 V ns nC NOTES: 1. RJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RJC is guaranteed by design while RCA is determined by the user's board design. a. 53C/W when mounted on a 1 in2 pad of 2 oz copper b. 125C/W when mounted on a minimum pad of 2 oz copper 2. Pulse Test: Pulse Width < 300s, Duty cycle < 2.0%. 3. Starting TJ = 25oC; N-ch: L = 3mH, IAS = 11A, VDD = 30V, VGS = 10V FDMC8678S Rev.C 2 www.fairchildsemi.com FDMC8678S N-Channel Power Trench(R) SyncFETTM Typical Characteristics TJ = 25C unless otherwise noted 60 VGS = 10V VGS = 4V VGS = 3.5V 3.0 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 50 ID, DRAIN CURRENT (A) 2.5 VGS = 3.5V 40 VGS = 4.5V 2.0 1.5 1.0 VGS = 4V VGS = 4.5V 30 VGS = 6.0V 20 10 0 0.0 PULSE DURATION = 300s DUTY CYCLE = 2%MAX VGS = 6V PULSE DURATION = 300s DUTY CYCLE = 2%MAX VGS = 10V 0.5 0 10 20 30 40 50 60 ID, DRAIN CURRENT(A) 0.2 0.4 0.6 0.8 1.0 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 30 SOURCE ON-RESISTANCE (m) 1.6 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 1.4 1.2 1.0 0.8 0.6 -50 ID = 15A VGS = 10V 25 20 15 PULSE DURATION = 300s DUTY CYCLE = 2%MAX rDS(on), DRAIN TO ID = 15A TJ = 125oC 10 5 TJ = 25oC -25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (oC) 150 0 2 4 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On- Resistance vs Junction Temperature 60 IS, REVERSE DRAIN CURRENT (A) Figure 4. On-Resistance vs Gate to Source Voltage 60 50 ID, DRAIN CURRENT (A) PULSE DURATION = 300s DUTY CYCLE = 2%MAX 10 VGS = 0V VDS = 5V 40 30 TJ = 125oC TJ = 125oC 1 TJ = 25oC 0.1 TJ = -55oC 20 TJ = 25oC 10 TJ = -55oC 0.01 0 1 2 3 4 5 0.001 0.0 0.2 0.4 0.6 0.8 1.0 VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current FDMC8678S Rev.C 3 www.fairchildsemi.com FDMC8678S N-Channel Power Trench(R) SyncFETTM Typical Characteristics TJ = 25C unless otherwise noted 10 VGS, GATE TO SOURCE VOLTAGE(V) 5000 ID = 15A VDD = 10V VDD = 15V Ciss CAPACITANCE (pF) 8 6 1000 Coss VDD = 20V 4 2 0 0 5 10 15 20 25 30 Qg, GATE CHARGE(nC) 100 f = 1MHz VGS = 0V Crss 10 0.1 1 10 30 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage 100 30 IAS, AVALANCHE CURRENT(A) ID, DRAIN CURRENT (A) 10 TJ = 25oC 10 1ms 10ms 1 THIS AREA IS LIMITED BY rDS(on) 100ms 1s 10s DC TJ = 125oC 0.1 SINGLE PULSE TJ = MAX RATED RJA = 125 C/W TA = 25oC o 1 0.01 0.1 1 10 100 400 0.01 0.01 0.1 1 10 100 tAV, TIME IN AVALANCHE(ms) VDS, DRAIN to SOURCE VOLTAGE (V) Figure 9. Unclamped Inductive Switching Capability 2000 Figure 10. Forward Bias Safe Operating Area 1000 P(PK), PEAK TRANSIENT POWER (W) VGS = 10V 100 SINGLE PULSE RJA = 125 C/W TA = 25 C o o 10 1 0.5 -4 10 10 -3 10 -2 10 -1 10 0 10 1 100 1000 t, PULSE WIDTH (sec) Figure 11. Single Pulse Maximum Power Dissipation FDMC8678S Rev.C 4 www.fairchildsemi.com FDMC8678S N-Channel Power Trench(R) SyncFETTM Typical Characteristics TJ = 25C unless otherwise noted 2 1 NORMALIZED THERMAL IMPEDANCE, ZJA DUTY CYCLE-DESCENDING ORDER 0.1 0.01 D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 1E-3 SINGLE PULSE RJA = 125 C/W o NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJA x RJA + TA 1E-4 -4 10 10 -3 10 -2 10 -1 10 0 10 1 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 12. Transient Thermal Response Curve FDMC8678S Rev.C 5 www.fairchildsemi.com FDMC8678S N-Channel Power Trench(R) SyncFETTM Typical Characteristics (continued) SyncFET Schottky body diode Characteristics Fairchild's SyncFET process embeds a Schottky diode in parallel with PowerTrench MoSFET. This diode exhibits similar characteristics to a discrete external Schottky diode in parallel with a MOSFET. Figure 14 shows the reverses recovery characteristic of the FDMC8678S. Schottky barrier diodes exhibit significant leakage at high temperature and high reverse voltage. This will increase the power in the device. IDSS, REVERSE LEAKAGE CURRENT (A) 10 10 10 10 10 -1 CURRENT : 0.8A/div -2 TJ = 125oC -3 TJ = 100oC -4 -5 TJ = 25oC 10 -6 0 5 10 15 20 25 30 TIME : 12.5ns/div VDS, REVERSE VOLTAGE (V) Figure 13. SyncFET body diode reverse recovery characteristic Figure 14. SyncFET body diode reverses leakage versus drain-source voltage FDMC8678S Rev.C 6 www.fairchildsemi.com FDMC8678S N-Channel Power Trench(R) SyncFETTM Dimensional Outline and Pad Layout FDMC8678S Rev.C 7 www.fairchildsemi.com FDMC8678S N-Channel Power Trench(R) SyncFETTM TRADEMARKS The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx(R) Build it NowTM CorePLUSTM CROSSVOLTTM CTLTM Current Transfer LogicTM EcoSPARK(R) (R) Fairchild(R) Fairchild Semiconductor(R) FACT Quiet SeriesTM FACT(R) FAST(R) FastvCoreTM FPSTM FRFET(R) Global Power ResourceSM Green FPSTM Green FPSTM e-SeriesTM GTOTM i-LoTM IntelliMAXTM ISOPLANARTM MegaBuckTM MICROCOUPLERTM MicroFETTM MicroPakTM MillerDriveTM Motion-SPMTM OPTOLOGIC(R) OPTOPLANAR(R) (R) PDP-SPMTM Power220(R) Power247(R) POWEREDGE(R) Power-SPMTM PowerTrench(R) Programmable Active DroopTM QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM SMART STARTTM SPM(R) STEALTHTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM The Power Franchise(R) TinyBoostTM TinyBuckTM TinyLogic(R) TINYOPTOTM TinyPowerTM TinyPWMTM TinyWireTM SerDesTM UHC(R) UniFETTM VCXTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. tm Rev. I31 Preliminary First Production This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor. The datasheet is printed for reference information only. No Identification Needed Full Production Obsolete Not In Production FDMC8678S Rev.C www.fairchildsemi.com |
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