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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor DESCRIPTION *Excellent Safe Operating Area *Collector-Emitter Saturation Voltage: VCE(sat)= 1.0 V(Max)@ IC = 5A *Collector-Emitter Sustaining Voltage: VCEO(SUS)= 150 V(Min) APPLICATIONS *Designed for horizontal deflection output stage of TVs and CRTs applications ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VCBO VCEV VCEO VEBO IC ICM ICM IB B BU109 PARAMETER Collector-Base Voltage Collector-Emitter Voltage- VBE= -1.5V Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak(Repetitive) Collector Current-Peak(t= 10ms) Base Current Collector Power Dissipation@TC=25 Junction Temperature Storage Temperature VALUE 330 330 150 6 7 10 15 4 60 150 -65~150 UNIT V V V V A A A A W PC TJ Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c Rth j-a PARAMETER Thermal Resistance,Junction to Case Thermal Resistance,Junction to Ambient MAX 2.08 70 UNIT /W /W isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN BU109 MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA ; IB= 0 150 V VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A B 1.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 0.5A B 1.2 5.0 0.1 1.0 1.0 V ICES Collector Cutoff Current VCE= 330V; VBE= 0 VCE= 200V; VBE= 0 VCE= 200V; VBE= 0,TC=150 VEB= 6V; IC= 0 mA IEBO Emitter Cutoff Current mA fT Current Gain-Bandwidth Product IC= 0.5A ; VCE= 10V 10 MHz toff Turn-Off Time IC= 5A; IB= 0.5A B 0.75 s isc Websitewww.iscsemi.cn 2 |
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